ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 8A TO252-4L
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc), 12A (Tc)
- Rds On (Max) @ Id, Vgs：25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA, 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 4.5V, 12nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：395pF @ 15V, 730pF @ 15V
- Power - Max：19W (Tc), 30W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Supplier Device Package：TO-252-4L
- Grade：-
- Qualification：-
Download product information
Overview
The AOD607A is a dual complementary MOSFET in a TO-252-4L package, integrating an N-channel and P-channel device. The N-channel Q1 supports 30V drain-source voltage and 8A continuous current with on-resistance under 25mΩ at VGS=10V. The P-channel Q2 handles -30V and -12A with resistance below 27mΩ at VGS=-10V. Both transistors feature low gate charge and excellent thermal performance, rated for junction temperatures up to 150°C.
Feature Summary
- Dual complementary configuration combining N-channel and P-channel MOSFETs in a single surface-mount package
- Trench power MOSFET technology providing low on-resistance and low gate charge characteristics
- Validated reliability through 100% testing for unclamped inductive switching (UIS) capability and gate resistance
Applications
- DC fan motor control circuits
- Low-voltage synchronous rectification applications
- Power management modules requiring compact dual-transistor solutions
Procurement Notes
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation before procurement. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure the selected package form matches the Tape & Reel specification provided by the manufacturer.
Selection Notes
Select this component for designs requiring matched N-channel and P-channel pairs within a limited footprint. Evaluate the thermal impedance values relative to the specific PCB copper area and ambient airflow conditions. Verify that the gate drive voltage levels are sufficient to achieve the specified low on-resistance thresholds for both channels.
Part Context
This part belongs to the AOD series of dual complementary MOSFETs manufactured by Alpha & Omega Semiconductor. It utilizes Trench Power MOSFET technology to deliver high efficiency in low-voltage switching environments. The integrated design simplifies layout compared to using discrete components.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout configurations and thermal resistance specifications when evaluating potential replacement parts from other vendors.
FAQ
What is the maximum continuous drain current for the P-channel transistor?
The P-channel transistor (Q2) has a maximum continuous drain current rating of -12A.
Is the AOD607A tested for avalanche energy handling?
Yes, the datasheet specifies that the device undergoes 100% Unclamped Inductive Switching (UIS) testing.
What is the typical total gate charge for the N-channel at 10V?
The typical total gate charge (Qg) for the N-channel transistor at VGS=10V is 7.2 nC.
