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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 12A TO252-4L
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel Complementary
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Rds On (Max) @ Id, Vgs：30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V, 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：545pF @ 20V, 890pF @ 20V
- Power - Max：2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Supplier Device Package：TO-252-4L
- Grade：-
- Qualification：-
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Overview
The AOD609G is a complementary enhancement mode field effect transistor featuring integrated n-channel and p-channel MOSFETs in a TO-252-4L package. The n-channel device provides a drain-source voltage of 40 V, continuous drain current of 12 A at 25°C, and on-resistance below 30 mΩ at VGS=10V. The p-channel counterpart offers -40 V breakdown, -12 A current capability, and on-resistance under 45 mΩ at VGS=-10V. Both channels support junction temperatures up to 175°C and are verified for 100% unclamped inductive switching (UIS) reliability.
Feature Summary
- Complementary N-Channel and P-Channel Enhancement Mode Field Effect Transistors
- Advanced Trench Technology for Low On-Resistance and Gate Charge
- 100% Unclamped Inductive Switching (UIS) Tested
- RoHS Compliant and Halogen Free Construction
Applications
- H-Bridge Circuits
- Inverters
- Motor Control Applications
Procurement Notes
Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and green material guarantees based on the manufacturing data code printed on the component body. Ensure the procurement channel sources directly from authorized distributors to maintain product integrity.
Selection Notes
Select this component for low-voltage applications requiring complementary switching pairs within a single footprint. Evaluate thermal management requirements carefully, as power dissipation limits depend heavily on PCB copper area and ambient airflow conditions. Verify that gate drive voltages align with the specified thresholds for optimal RDS(ON) performance across the operating temperature range.
Part Context
The AOD609G belongs to the AOD series of complementary MOSFETs manufactured by Alpha & Omega Semiconductor. It utilizes trench technology to achieve high efficiency in compact surface-mount packages. This device is designed to simplify circuit design by integrating matched n-channel and p-channel devices, reducing board space compared to discrete solutions.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Ensure any replacement maintains compatible pinout configurations, specifically the shared drain tab connection in the TO-252-4L package. Verify that alternative components meet or exceed the 40 V rating and 12 A current capabilities required for the application.
