AOI11S60

Description：MOSFET N-CH 600V 11A TO251A
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:6064a98c97e7 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 600V 11A TO251A
Series：aMOS™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：399mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id：4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：545 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：208W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-251A
Package / Case：TO-251-3 Stub Leads, IPAK

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AOI11S60

Overview

The AOI11S60 is a 600V N-channel power MOSFET from Alpha & Omega Semiconductor, utilizing the aMOSTM process. It features a maximum drain-source voltage of 600V and continuous drain current of 11A at 25°C case temperature. The device has a maximum on-resistance of 0.399Ω at VGS=10V and ID=3.8A. Key electrical parameters include a typical gate charge of 11nC, peak pulsed drain current of 45A, and avalanche energy rating of 120mJ. It operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Fabricated using advanced aMOSTM high voltage process for robust switching performance.
Guaranteed avalanche capability with 100% UIS testing.
Optimized low RDS(on), Qg, and EOSS for efficient offline power supply designs.
Features guaranteed dv/dt ruggedness and peak diode recovery characteristics.

Applications

Offline power supply designs
Switching applications requiring high robustness

Procurement Notes

Verify the specific ordering suffix matches the required package variant (e.g., TO-252/DPAK). Confirm RoHS compliance status as per the latest datasheet revision. Ensure the component meets the intended thermal management requirements given the specified junction-to-ambient resistance values. Check for any recent PCN updates regarding packaging or manufacturing location changes.

Selection Notes

Select this component for applications requiring a 600V N-channel MOSFET with moderate current handling capabilities. Consider the 0.399Ω on-resistance for conduction loss calculations at the target operating current. Evaluate the 11nC gate charge against driver capabilities for switching speed optimization. Verify that the 120mJ avalanche energy rating aligns with the circuit's inductive load requirements.

Part Context

The AOI11S60 belongs to the aMOSTM family of power transistors from Alpha & Omega Semiconductor. It is functionally equivalent to the AOD11S60, sharing identical electrical specifications and performance characteristics. Both parts are designed for similar high-voltage switching applications and utilize the same underlying semiconductor technology.