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Product Detailed Parameters
- Description：MOSFET N-CH 30V 8A/19A TO251A
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：37.5mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：432 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：4.2W (Ta), 21W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251A
- Package / Case：TO-251-3 Stub Leads, IPAK
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Overview
The AOI4102 is an N-channel Power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage (Vdss) of 30 V and operates with a continuous drain current (Id) of 8 A at case temperature or 19 A under specific thermal conditions. The device utilizes TO-251A (IPAK) through-hole packaging, supporting power dissipation up to 89 W at the case. Key electrical parameters include a maximum gate threshold voltage of 4 V at 250 µA and a maximum gate charge of 9.2 nC at 10 V. Input capacitance is rated at 434 pF at 100 V, with a maximum gate-source voltage of ±30 V. The component functions within a junction temperature range of -55°C to 150°C.
Feature Summary
- N-channel enhancement mode metal oxide semiconductor field effect transistor
- Through-hole IPAK package for robust mounting applications
- High voltage tolerance suitable for low-voltage switching circuits
Applications
- Low-side switching in DC-DC converter topologies
- Power management modules requiring 30 V isolation
- General purpose high-current switching applications
Procurement Notes
Verify part status as obsolete before procurement planning. Confirm exact thermal resistance values from official datasheets for heat sink design. Ensure compatibility with TO-251A footprints during PCB layout. Check RoHS compliance documentation for regulatory adherence. Validate supplier authenticity due to end-of-life status.
Selection Notes
Select this component for designs requiring 30 V breakdown with moderate current handling in through-hole formats. Compare input capacitance and gate charge against alternative MOSFETs for switching speed requirements. Evaluate thermal performance constraints based on the specified 89 W case dissipation limit. Consider package availability given the obsolete status when finalizing circuit architecture.
Part Context
Alpha & Omega Semiconductor Inc. specializes in power semiconductors including MOSFETs and IGBTs. The AOI4102 belongs to their discrete transistor portfolio, designed for efficient power control. The company maintains manufacturing capabilities across multiple global facilities, focusing on high-reliability components for industrial and consumer electronics markets.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult manufacturer obsolescence notices for potential lifecycle alternatives.
