AOK75B65H1

AOK75B65H1

$2.11
  • Description:IGBT 650V 150A TO-247
  • Series:Alpha IGBT™

SKU:daeec52e0389 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 650V 150A TO-247
  • Series:Alpha IGBT™
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):150 A
  • Current - Collector Pulsed (Icm):225 A
  • Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 75A
  • Power - Max:556 W
  • Switching Energy:3.77mJ (on), 2.04mJ (off)
  • Input Type:Standard
  • Gate Charge:109 nC
  • Td (on/off) @ 25°C:47ns/175ns
  • Test Condition:400V, 75A, 4Ohm, 15V
  • Reverse Recovery Time (trr):295 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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AOK75B65H1

Overview

The AOK75B65H1 is a 650V Alpha IGBT with an integrated soft and fast recovery anti-parallel diode, housed in a TO-247 package. It supports a continuous collector current of 75A at TC=100°C and 27A at TC=25°C, with a pulsed collector current (Icm) of 225A. The collector-emitter saturation voltage (VCE(sat)) is typically 1.85V at TJ=25°C and IC=75A. Total gate charge (Qg) is 109nC, with turn-off switching energy (Eoff) at 2.04mJ under standard test conditions (VGE=15V, VCC=400V, IC=75A). The device operates within a junction temperature range of -55°C to 175°C.

Feature Summary

  • Utilizes latest Alpha IGBT technology for high efficiency and very high switching speed.
  • Features a very fast and soft recovery freewheeling diode with low turn-off switching loss.
  • Provides high efficient turn-on di/dt controllability and very good EMI behavior.
  • Demonstrates short-circuit ruggedness with a withstand time of up to 5 microseconds.

Applications

  • Welding Machines
  • Motor Drives
  • UPS & Solar Inverters
  • Very High Switching Frequency Applications

Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact electrical tolerances and packaging configurations. Ensure that thermal management designs account for the maximum junction temperature limits specified in the datasheet. Confirm compliance with RoHS and halogen-free requirements prior to integration into final assemblies.

Selection Notes

Select this component when designing circuits requiring 650V blocking capability with high current handling up to 75A. Consider the low VCE(sat) and optimized switching energies for applications prioritizing conduction and switching efficiency. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target operating environment.

Part Context

This part belongs to the Alpha IGBT product line from Alpha & Omega Semiconductor Inc., designed for power conversion applications. It integrates an IGBT switch with an anti-parallel diode in a single TO-247 package, simplifying circuit design for inverters and motor drives compared to discrete solutions.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.

FAQ

What is the maximum short-circuit withstand time for the AOK75B65H1?

The device has a short-circuit withstand time of 5 microseconds, limited by the maximum junction temperature of 175°C.

How does the junction temperature affect the collector-emitter saturation voltage?

The VCE(sat) increases with temperature; it is typically 1.85V at 25°C, 2.08V at 125°C, and 2.21V at 175°C under rated current conditions.

What are the typical switching times at TJ=175°C?

At TJ=175°C, VGE=15V, VCC=400V, and IC=75A, the turn-on delay is 46ns, rise time is 94ns, turn-off delay is 202ns, and fall time is 117ns.

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