AOM020V120X2

$21.44

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:d533293b6158 Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

AOM020V120X2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is 1200V SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOM020V120X2

Description：1200V SILICON CARBIDE MOSFET
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：28mOhm @ 27A, 15V
Vgs(th) (Max) @ Id：2.8V @ 27mA
Gate Charge (Qg) (Max) @ Vgs：166 nC @ 15 V
Vgs (Max)：+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds：5180 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：348W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for AOM020V120X2

AOM020V120X2

Single FETs, MOSFETs Overview

The AOM020V120X2 is a 1200V αSiC Silicon Carbide Power MOSFET in a TO-247-4L package. It features a typical RDS(ON) of 20mΩ at VGS=15V and ID=27A, with a maximum of 28mΩ at 25°C. The device supports an 89A continuous drain current at TC=25°C and a 200A pulsed current. Key dynamic parameters include a total gate charge (Qg) of 166nC, body diode reverse recovery charge (Qrr) of 225nC, and turn-off energy (Eoff) of 81µJ. It operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary αSiC MOSFET technology for low conduction loss and fast switching performance.
Optimized for a recommended operating gate drive voltage of +15V.
Features low reverse recovery charge (Qrr) and low output capacitance stored energy (EOSS).
Includes four leads in the TO-247-4L package to minimize source inductance.

Single FETs, MOSFETs Applications

Electric Vehicle (EV) Chargers
Solar Inverters
Motor Drives
Uninterruptible Power Supplies (UPS)
Switch Mode Power Supplies (SMPS)

Single FETs, MOSFETs Procurement Notes

Verify the specific revision number on the datasheet, as Alpha & Omega Semiconductor reserves the right to change specifications without notice. Confirm that the TO-247-4L pinout matches the target circuit design, specifically ensuring the fourth lead connection aligns with system requirements. Ensure the application does not involve life support devices, as usage is explicitly prohibited by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low switching losses and high thermal stability up to 175°C. The optimized gate drive voltage of 15V should be considered when designing the driver circuitry. Evaluate the thermal resistance values against the expected power dissipation and heatsinking capabilities to ensure operation remains within safe limits under continuous and pulsed load conditions.

Single FETs, MOSFETs Part Context

This part belongs to Alpha & Omega Semiconductor's αSiC portfolio, designed for advanced power management solutions. The company integrates discrete process technology with advanced packaging to address complex power requirements in industrial and consumer electronics. This silicon carbide device represents the manufacturer's focus on high-efficiency power conversion technologies.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. When selecting alternatives, verify compatibility with 1200V ratings, TO-247-4L packaging, and similar electrical characteristics such as RDS(ON) and Qrr.