AON3816

$0.22

Description：MOSFET 2N-CH 20V 8DFN
Series：-

SKU:7c482b70421f Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 8DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1100pF @ 10V
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：8-DFN (3x3)
Grade：-
Qualification：-

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AON3816

Overview

The AON3816 is a dual N-channel MOSFET manufactured by Alpha & Omega Semiconductor Inc. utilizing advanced trench technology. It features a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 4A at VGS=4.5V. The device offers low on-resistance, specified as less than 22mΩ at VGS=4.5V, less than 23mΩ at VGS=4V, and less than 28mΩ at VGS=2.5V. It operates with gate voltages as low as 1.8V while maintaining a maximum gate-source voltage rating of ±12V. The component includes ESD protection and is housed in a DFN 3x3 package.

Feature Summary

Dual common-drain configuration suitable for uni-directional or bi-directional load switch applications
Advanced trench technology providing excellent RDS(ON) combined with low gate charge
ESD protected design ensuring robustness against electrostatic discharge events

Applications

Uni-directional load switching
Bi-directional load switching
Consumer market electronic circuits

Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon procurement to ensure compliance with the consumer market qualification standards defined by Alpha & Omega Semiconductor Inc. Confirm that the application does not involve life support devices or systems, as such uses are explicitly unauthorized and liability is not assumed by the manufacturer for these critical components.

Selection Notes

Select the AON3816 when a compact dual N-channel solution is required for low-voltage switching applications. The device is optimized for operation with gate drive voltages as low as 1.8V, making it suitable for logic-level control interfaces. Ensure the thermal management design accounts for the junction-to-ambient thermal resistance characteristics provided in the datasheet to maintain safe operating temperatures under expected load conditions.

Part Context

The AON3816 belongs to the family of dual N-channel MOSFETs produced by Alpha & Omega Semiconductor Inc. This series leverages trench technology to deliver high efficiency in power switching roles. The component is specifically designed for the consumer electronics sector, offering a balance of low on-resistance and fast switching capabilities within a small footprint form factor.