AON4807_001

Overview

The AON4807 is a dual P-channel enhancement mode MOSFET from Alpha & Omega Semiconductor. It utilizes advanced trench technology to achieve low on-resistance and gate charge, making it suitable for load switch and battery protection applications. The device features a drain-source voltage of -30V and a continuous drain current of -4A at VGS=-10V. On-resistance is less than 68mΩ at VGS=-10V and less than 105mΩ at VGS=-4.5V. It operates within a junction temperature range of -55°C to 150°C and is housed in a DFN 3x2 package.

Feature Summary

• Dual P-Channel Enhancement Mode Field Effect Transistor
• Advanced Trench MOSFET Technology
• Low Resistance Package Design

Applications

• Load Switch Applications
• Battery Protection Circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and electrical characteristics. Confirm that the component meets the required consumer market qualification standards. Ensure thermal management aligns with the specified junction-to-ambient resistance values for the intended PCB layout.

Selection Notes

Select this component for circuits requiring dual independent P-channel switching with low on-resistance. Verify that the gate drive voltage supports the specified RDS(ON) thresholds at -4.5V or -10V. Consider the DFN 3x2 package dimensions for board space constraints and ensure adequate copper area for thermal dissipation.

Part Context

The AON4807 belongs to Alpha & Omega Semiconductor's portfolio of dual MOSFET solutions designed for compact power management. It serves as a discrete alternative to integrated load switches, offering flexibility in high-current DC-DC converter input stages and portable device power distribution networks.

Replacement Considerations

Check datasheets for compatible dual P-channel MOSFETs with similar -30V ratings and comparable RDS(ON) specifications. Verify package compatibility and pin alignment before substitution.