AON5802BG

Description：MOSFET 2N-CH 30V 10A 6DFN
Series：-

SKU:9f1d5743740d Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 10A 6DFN
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：10A (Ta)
Rds On (Max) @ Id, Vgs：18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1050pF @ 15V
Power - Max：3.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-WFDFN Exposed Pad
Supplier Device Package：6-DFN-EP (2x5)
Grade：-
Qualification：-

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AON5802BG

Overview

The AON5802 is a common-drain dual N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench technology to deliver low on-resistance and gate charge, supporting operation with gate voltages as low as 2.5V while maintaining a 12V maximum VGS rating. The device features a 30V drain-source breakdown voltage (BVDSS) and a continuous drain current of 7.2A at TA=25°C. Key electrical parameters include an on-resistance (RDS(ON)) of less than 20 mΩ at VGS=4.5V and less than 30 mΩ at VGS=2.5V. The component is housed in a DFN 2x5 package and is ESD protected.

Feature Summary

Common-drain configuration suitable for uni-directional or bi-directional load switch applications
Advanced trench technology providing excellent RDS(ON) and low gate charge
Capable of operation with gate voltages as low as 2.5V
ESD protected construction

Applications

Uni-directional load switching
Bi-directional load switching

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation before procurement. Ordering suffixes may indicate variations in packaging, tape-and-reel specifications, or environmental compliance certifications such as RoHS status. Confirm that the requested part number matches the exact physical package and marking requirements of your design to ensure compatibility during assembly.

Selection Notes

Select this component for applications requiring a dual N-channel MOSFET in a compact DFN 2x5 footprint. Ensure the operating gate voltage aligns with the specified thresholds, noting the RDS(ON) performance varies significantly between 2.5V and 4.5V drive levels. Consider the thermal resistance characteristics and board copper area requirements for adequate heat dissipation under steady-state conditions.

Part Context

The AON5802 belongs to the AON58xx series of dual N-channel enhancement mode field effect transistors from Alpha & Omega Semiconductor. This series is designed for consumer market applications utilizing advanced trench technology. The device is standard product compliant with Pb-free specifications, meeting ROHS and Sony 259 standards.