AON6980

Overview

The AON6980 is a dual asymmetric N-Channel AlphaMOS power MOSFET in an 8-DFN 5x6 package. It integrates Q1 and Q2 with distinct electrical characteristics. Q1 features a drain-source voltage of 30V, continuous drain current of 28A at VGS=10V, and maximum on-resistance below 6.8mΩ at VGS=10V or 10.3mΩ at VGS=4.5V. Q2 provides 30V breakdown, 36A continuous current, and on-resistance under 3.8mΩ at VGS=10V or 4.9mΩ at VGS=4.5V. The device utilizes Trench Power AlphaMOS technology for low gate charge and high current capability.

Feature Summary

• Dual asymmetric configuration integrating two independent N-channel MOSFETs within a single compact package.
• Incorporates SRFET Soft Recovery MOSFET technology to optimize body diode reverse recovery performance.
• Manufactured using Trench Power AlphaMOS (αMOS LV) technology to achieve low on-resistance and reduced gate charge.

Applications

• DC/DC converters in computing and server infrastructure
• Point-of-load (POL) power supply designs
• Isolated DC/DC converters in telecom equipment
• Industrial power conversion systems

Procurement Notes

Verify the specific orderable part number against the manufacturer's official documentation before procurement. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure the selected package form matches the required tape and reel specifications for automated assembly processes.

Selection Notes

Select this component when designing circuits requiring asymmetric dual MOSFET configurations with differing current handling capabilities. Evaluate thermal resistance parameters relative to the specific PCB copper area and ambient conditions. Verify that the gate threshold voltage and total gate charge align with the driving controller's output specifications.

Part Context

This component belongs to the Alpha & Omega Semiconductor Dual Asymmetric N-Channel AlphaMOS product line. It is designed to replace discrete dual MOSFET solutions by providing integrated functionality in a space-saving DFN 5x6 package. The series emphasizes high reliability through comprehensive UIS testing.

Replacement Considerations

No direct substitute part numbers are documented in the provided source material. Any replacement must be evaluated based on matching pinout compatibility, voltage ratings, and thermal characteristics.

FAQ

What is the difference between Q1 and Q2 in the AON6980?

Q1 and Q2 are asymmetrically configured. Q2 supports a higher continuous drain current (36A vs 28A) and lower on-resistance (<3.8mΩ vs <6.8mΩ) compared to Q1, while both share the same 30V drain-source voltage rating.

Does the AON6980 include a body diode?

Yes, the device includes an integrated Schottky diode associated with the SRFET (Soft Recovery MOSFET) technology, which optimizes reverse recovery characteristics.

What packaging format is available for the AON6980?

The AON6980 is available in the DFN 5x6B package type, supplied in Tape & Reel format with a minimum order quantity of 3000 units.