Single FETs, MOSFETs AON7202L product image

AON7202L

  • Description:MOSFET N-CH 30V 20A/40A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk

SKU:9e72c9780c65 Category: Brand:

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AON7202L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 20A/40A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON7202L

  • Description:MOSFET N-CH 30V 20A/40A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta), 36W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN-EP (3x3)
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AON7202L

AON7202L

Single FETs, MOSFETs Overview

The AON7202 is a 30V N-Channel MOSFET utilizing Trench technology for high-frequency switching. It features a maximum drain-source voltage of 30V and continuous drain current of 40A at TC=25°C. The on-resistance is less than 5mΩ at VGS=10V and less than 6.8mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.3V to 2.3V, total gate charge of 21nC to 33nC at 10V, and input capacitance of 1450pF to 2200pF. Thermal resistance junction-to-case is 3.6°C/W, with a maximum operating temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • Optimized Trench MOSFET technology designed for efficient high-frequency switching performance.
  • Extremely low combination of RDS(ON) and Crss minimizes power losses.
  • Features a Schottky style soft recovery body diode for controlled switching behavior.
  • Verified through 100% UIS testing and 100% Rg testing.

Single FETs, MOSFETs Applications

  • Consumer market applications
  • High frequency switching circuits
  • Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package type DFN 3x3 EP against your PCB footprint requirements. Confirm that the component is designated for the consumer market and not authorized for life support devices or critical systems. Ensure thermal design accounts for the specified junction-to-ambient resistance values under your specific board layout conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 30V rating is sufficient and low on-resistance is required for efficiency. Consider the DFN 3x3 EP package for space-constrained designs. Evaluate the thermal characteristics based on your expected ambient temperatures and duty cycles to ensure operation within the 150°C maximum junction limit.

Single FETs, MOSFETs Part Context

Alpha & Omega Semiconductor manufactures the AON7202 as part of their N-Channel MOSFET portfolio. The company specializes in power management solutions using advanced trench technologies. This device is intended for general consumer electronics and power applications requiring reliable switching capabilities.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 40A at a case temperature of 25°C.

Is the device suitable for critical life support systems?

No, the product is designed and qualified for the consumer market only. Applications as critical components in life support devices are not authorized.

What is the typical reverse recovery time of the body diode?

The typical reverse recovery time (trr) is 12ns, with a maximum of 18ns under test conditions of IF=20A and dI/dt=500A/μs.

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