Single FETs, MOSFETs AON7522E product image

AON7522E

$0.71
  • Description:MOSFET N-CH 30V 21A/34A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:dfc4b417a628 Category: Brand:

  
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AON7522E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 30V 21A/34A 8DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AON7522E

  • Description:MOSFET N-CH 30V 21A/34A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Ta), 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1540 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.1W (Ta), 31W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-DFN-EP (3x3)
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for AON7522E

AON7522E

Single FETs, MOSFETs Overview

The AON7522E is a 30V N-Channel AlphaMOS MOSFET in an 8-pin DFN 3x3 EP package. It features a drain-source breakdown voltage of 30V, continuous drain current of 34A at VGS=10V, and maximum junction temperature of 150°C. On-resistance is less than 4mΩ at VGS=10V and 6.8mΩ at VGS=4.5V. Gate charge is 45nC at 10V. Thermal resistance is 4°C/W junction-to-case and 75°C/W junction-to-ambient.

Single FETs, MOSFETs Feature Summary

  • Utilizes latest Trench Power AlphaMOS technology for optimized performance
  • Provides very low on-resistance at reduced gate drive voltages
  • Includes built-in ESD protection rated to HBM Class 2 standards
  • Manufactured as a RoHS and Halogen-Free compliant product

Single FETs, MOSFETs Applications

  • DC/DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Alpha & Omega Semiconductor documentation to confirm exact packaging configuration. Ensure compliance with applicable export control rules and regulations before procurement. Confirm suitability for intended application requirements.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance at 4.5V gate drive. The compact DFN 3x3 EP package suits space-constrained designs. Evaluate thermal management based on the specified junction-to-case resistance values.

Single FETs, MOSFETs Part Context

This device belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., utilizing advanced trench technology. It is designed for efficient switching performance in power management circuits.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Do not assume pin compatibility or electrical equivalence without datasheet confirmation.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 35A.

Is the device tested for avalanche ruggedness?

Yes, the device is 100% UIS tested.

AON7522EAON7522E
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