SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AON7900 is a single N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench MOSFET technology to deliver high performance in surface-mount applications. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 125A at case temperature. Key electrical parameters include a maximum on-resistance of 2.8 milliohms at a gate-source voltage of 10V, with a threshold voltage maximum of 2.2V at 250µA. The component operates within a junction temperature range of -55°C to 150°C and is housed in an 8-DFN-EP package.
Verify the specific manufacturer datasheet for the AON7900 to confirm current production status and detailed electrical characteristics. Ensure that the selected component meets all required thermal and electrical specifications for the intended circuit design before finalizing procurement decisions.
Select this component based on its 30V voltage rating and 125A current capacity requirements. Evaluate the thermal resistance characteristics of the 8-DFN-EP package against the system's heat dissipation capabilities. Confirm compatibility with standard PCB footprint dimensions during the layout phase.
This part belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., which focuses on high-performance discrete power devices. The AON7900 represents a specific configuration within this lineup designed for efficient power management solutions requiring high current density and compact form factors.
Consult official manufacturer substitution guides or cross-reference databases to identify verified equivalent parts. Ensure any replacement maintains identical pinout configurations, voltage ratings, and thermal performance metrics.