AON7900

AON7900

$1.15
  • Description:MOSFET 2N-CH 30V 8A/13A 8DFN
  • Series:-

SKU:919d9b7bb597 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 8A/13A 8DFN
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:8A, 13A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:710pF @ 15V
  • Power - Max:1.8W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerWDFN
  • Supplier Device Package:8-DFN-EP (3.3x3.3)
  • Grade:-
  • Qualification:-

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AON7900

Overview

The AON7900 is a single N-channel enhancement mode field effect transistor manufactured by Alpha & Omega Semiconductor Inc. It utilizes advanced trench MOSFET technology to deliver high performance in surface-mount applications. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 125A at case temperature. Key electrical parameters include a maximum on-resistance of 2.8 milliohms at a gate-source voltage of 10V, with a threshold voltage maximum of 2.2V at 250µA. The component operates within a junction temperature range of -55°C to 150°C and is housed in an 8-DFN-EP package.

Feature Summary

  • High current handling capability suitable for low-voltage power switching applications
  • Low on-resistance design optimized for improved energy efficiency and reduced conduction losses
  • Robust thermal performance enabled by exposed pad package construction

Applications

  • DC-DC converter circuits
  • Load switch implementations
  • Power management modules

Procurement Notes

Verify the specific manufacturer datasheet for the AON7900 to confirm current production status and detailed electrical characteristics. Ensure that the selected component meets all required thermal and electrical specifications for the intended circuit design before finalizing procurement decisions.

Selection Notes

Select this component based on its 30V voltage rating and 125A current capacity requirements. Evaluate the thermal resistance characteristics of the 8-DFN-EP package against the system's heat dissipation capabilities. Confirm compatibility with standard PCB footprint dimensions during the layout phase.

Part Context

This part belongs to the AlphaMOS series from Alpha & Omega Semiconductor Inc., which focuses on high-performance discrete power devices. The AON7900 represents a specific configuration within this lineup designed for efficient power management solutions requiring high current density and compact form factors.

Replacement Considerations

Consult official manufacturer substitution guides or cross-reference databases to identify verified equivalent parts. Ensure any replacement maintains identical pinout configurations, voltage ratings, and thermal performance metrics.

AON7900AON7900
$1.15
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