AON7934

Overview

The AON7934 is a dual asymmetric N-Channel AlphaMOS power MOSFET featuring a Power DFN3x3A package. It integrates two independent channels, Q1 and Q2, with distinct current capabilities. Q1 supports a continuous drain current of 16A at VGS=10V with an on-resistance below 10.2mΩ, while Q2 handles 18A with resistance under 7.7mΩ. Both channels maintain low RDS(ON) at VGS=4.5V, specifically below 15.8mΩ for Q1 and 11.6mΩ for Q2. The device operates with a 30V drain-source voltage rating and includes 100% UIS and Rg testing for reliability.

Feature Summary

• Utilizes latest Trench Power AlphaMOS (αMOS LV) technology for enhanced performance
• Provides very low RDS(on) characteristics even at reduced gate-source voltages
• Features low gate charge to support efficient switching operations
• Includes high current capability suitable for demanding power applications

Applications

• DC/DC converters in computing systems
• Point-of-load (POL) regulation in servers
• Isolated DC/DC converters in telecom infrastructure
• Industrial power supply modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS and Halogen-Free compliance requirements as stated in the product summary. Ensure the supplier provides valid traceability documentation consistent with Alpha & Omega Semiconductor Inc. standards before finalizing acquisition.

Selection Notes

Select this component when designing circuits requiring asymmetric current handling within a compact footprint. The dual-channel configuration allows for independent control of different load paths. Consider the thermal resistance values provided for junction-to-case and junction-to-ambient environments to determine adequate heatsinking or PCB copper area requirements for sustained operation.

Part Context

This component belongs to the AlphaMOS family from Alpha & Omega Semiconductor Inc., designed for low-voltage power switching applications. The dual asymmetric structure distinguishes it from standard single-channel or symmetric dual MOSFETs by offering tailored electrical parameters for each internal transistor within a single integrated package.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult the manufacturer's official replacement guide or contact technical support directly to identify compatible alternatives with matching pinouts and electrical specifications.