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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 13A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
- Rds On (Max) @ Id, Vgs：10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V, 17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：485pF @ 15V, 807pF @ 15V
- Power - Max：2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：8-DFN-EP (3x3)
- Grade：-
- Qualification：-
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Overview
The AON7934 is a dual asymmetric N-Channel AlphaMOS power MOSFET in a Power DFN3x3A package. It features two independent channels with distinct electrical characteristics. Channel Q1 provides a drain current of 16A at VGS=10V with an on-resistance below 10.2mΩ. Channel Q2 delivers 18A at VGS=10V with an on-resistance under 7.7mΩ. Both channels support a 30V drain-source voltage and operate within a junction temperature range of -55°C to 150°C.
Feature Summary
- Dual asymmetric configuration with optimized performance for each channel
- Advanced Trench Power AlphaMOS technology for low conduction losses
- High current capability suitable for demanding power applications
- Low gate charge characteristics for efficient switching
Applications
- DC/DC converters in computing systems
- Point-of-load (POL) regulation in servers
- Isolated DC/DC converters in telecom infrastructure
- Industrial power management circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and compliance status. Confirm that the component meets RoHS and Halogen-Free requirements as specified in the datasheet. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before procurement.
Selection Notes
Select this component based on the requirement for a compact dual MOSFET solution with asymmetric drive capabilities. The low on-resistance values at both 10V and 4.5V gate voltages make it suitable for various logic levels. Ensure the thermal design accounts for the junction-to-ambient resistance in the target PCB layout to maintain safe operating temperatures.
Part Context
The AON7934 belongs to Alpha & Omega Semiconductor's AlphaMOS product line, utilizing advanced trench technology. It is designed to replace discrete single-channel solutions in space-constrained designs. The device integrates two N-Channel MOSFETs in a single small outline package, offering a compact alternative to traditional through-hole or larger surface-mount configurations.
Replacement Considerations
Direct replacements include other dual asymmetric N-Channel MOSFETs from Alpha & Omega Semiconductor such as the AON6934A or AON6936. Verify pinout compatibility and thermal resistance specifications when substituting with components from other manufacturers to ensure equivalent performance in the existing circuit design.
