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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 29A 8DFN
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：29A (Ta), 134A (Tc), 29A (Ta), 110A (Tc)
- Rds On (Max) @ Id, Vgs：2.4mOhm @ 20A, 10V, 2.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA, 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1940pF @ 15V, 1890pF @ 15V
- Power - Max：3.2W (Ta), 69W (Tc), 3.2W (Ta), 46W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：8-DFN-EP (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The AONP38324 is a dual asymmetric N-channel MOSFET featuring bottom source technology in a DFN3.3x3.3C package. Q1 offers a drain-source voltage of 30V, continuous drain current of 134A at TC=25°C, and on-resistance below 2.4mΩ at VGS=10V. Q2 provides 30V, 110A at TC=25°C, and on-resistance below 2.3mΩ at VGS=10V. Both channels maintain low on-resistance below 2.9mΩ at VGS=4.5V. The device includes 100% UIS and Rg testing.
Feature Summary
- Bottom source technology for optimized performance
- Very low on-resistance at Vgs 4.5V
- Low gate charge characteristics
- High current capability
Applications
- Buck-boost converters in computing
- Point of load converter
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm RoHS 2.0 and halogen-free compliance status directly with Alpha & Omega Semiconductor Inc. prior to procurement. Ensure the component meets all applicable export control rules and regulations.
Selection Notes
Evaluate thermal resistance values based on specific board designs, as junction-to-ambient resistance depends on copper area and airflow. Consider the asymmetric current ratings when designing circuits requiring different power levels for each channel. Verify switching parameters against target operating frequencies to ensure efficiency requirements are met.
Part Context
This component belongs to the Alpha & Omega Semiconductor portfolio of power semiconductors. It utilizes advanced packaging know-how to integrate discrete and IC semiconductor process technology. The product line focuses on high-performance power management solutions for various electronic applications.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult Alpha & Omega Semiconductor technical support for potential alternatives if this specific model is unavailable.
FAQ
What is the maximum junction temperature for the AONP38324?
The maximum junction temperature is 150°C.
Is the AONP38324 tested for unclamped inductive switching?
Yes, the datasheet confirms that the device undergoes 100% UIS testing.
What is the package type for the AONP38324?
The device is housed in a DFN3.3x3.3C package.
