AOSD26313C

$0.14

Description：MOSFET N/P-CH 30V 7A 8SOIC
Series：-

SKU:4d72045b85fc Category: FET, MOSFET Arrays Brand: Alpha & Omega Semiconductor Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 7A 8SOIC
Series：-
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：7A (Ta), 5.7A (Ta)
Rds On (Max) @ Id, Vgs：20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V, 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：600pF @ 15V, 1100pF @ 15V
Power - Max：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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AOSD26313C

Overview

The AOSD26313C is a complementary MOSFET pair in an SO-8 package, featuring a P-channel and an N-channel device. The P-channel unit has a drain-source voltage of -30V, continuous drain current of -5.7A at VGS=-10V, and on-resistance under 32mΩ. The N-channel unit offers 30V breakdown, 7A continuous current at VGS=10V, and on-resistance below 20mΩ. Both devices are rated for a junction temperature range of -55°C to 150°C and include ESD protection.

Feature Summary

Complementary P-channel and N-channel configuration within a single package
Advanced trench technology for low on-resistance and high current capability
100% tested for unclamped inductive switching (UIS) and gate resistance

Applications

Notebook AC-in load switch
Battery protection circuits
Charge and discharge management systems

Procurement Notes

Verify the specific orderable part number against the manufacturer's official documentation before purchasing. Confirm that the component meets RoHS and halogen-free compliance requirements as stated in the datasheet. Ensure the selected package type matches the intended PCB layout constraints.

Selection Notes

Select this component for applications requiring matched P-channel and N-channel performance in a compact form factor. Consider the thermal characteristics, specifically the junction-to-ambient resistance, when designing heat dissipation strategies. Verify that the gate drive voltages align with the specified thresholds for optimal on-resistance performance.

Part Context

This dual MOSFET integrates both polarities into one SO-8 footprint, simplifying board space usage compared to discrete components. It belongs to Alpha & Omega Semiconductor's lineup of advanced trench technology devices designed for efficient power switching in portable electronics.