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AOT10T60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CHANNEL 600V 10A TO220. Review the specifications below when checking this part for your BOM.
The AOT10T60P is a 600V N-Channel Power MOSFET utilizing Trench AlphaMOS-II technology. It features a maximum drain-source voltage of 600V and a continuous drain current of 10A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.7Ω at VGS=10V and ID=10A, with a typical gate charge of 26nC. It supports a peak pulsed drain current of 40A and has been tested for 100% unclamped inductive switching (UIS) capability.
Verify the specific package variant required, as the base model number corresponds to multiple physical packages including TO-220, TO-220F, and TO-263. Confirm ordering suffixes such as 'L' for tube or tape-and-reel packaging against the manufacturer's official part number form. Ensure compliance with RoHS and halogen-free standards if specified for the project requirements.
Select this component for designs requiring a 600V rating with moderate current handling up to 10A. Consider the thermal resistance values provided for the specific package type when designing heatsinking solutions. The low gate charge characteristics support efficient switching performance in general-purpose power conversion topologies.
This component belongs to the AOT10T60P family manufactured by Alpha & Omega Semiconductor Inc., which includes variants like AOB10T60P and AOTF10T60P. These devices share identical electrical specifications but differ in physical packaging formats such as TO-220, TO-220F, and TO-263 (D2PAK).
Direct substitutes within the same electrical specification include AOB10T60P and AOTF10T60P. Verify that the replacement part matches the required physical footprint and pinout configuration of the original design.
Yes, the datasheet confirms that the device has undergone 100% unclamped inductive switching (UIS) testing.
The device utilizes Trench AlphaMOS-II technology to achieve its performance characteristics.
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