Single FETs, MOSFETs AOTF12T60P product image

AOTF12T60P

  • Description:MOSFET N-CH 600V 12A TO220-3F
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:fc2569c623a1 Category: Brand:

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AOTF12T60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 12A TO220-3F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF12T60P

  • Description:MOSFET N-CH 600V 12A TO220-3F
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:520mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2028 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF12T60P

AOTF12T60P

Single FETs, MOSFETs Overview

The AOTF12T60P is a through-hole N-channel MOSFET utilizing Trench Power AlphaMOS-II technology. It features a drain-source voltage of 600V and a maximum junction temperature of 150°C. The device supports a continuous drain current of 12A at 25°C case temperature and a pulsed drain current of 48A. Maximum on-resistance is specified at 0.52Ω, with a typical gate charge of 33nC. Thermal resistance from junction to case is 2.5°C/W for the TO-220F package.

Single FETs, MOSFETs Feature Summary

  • Utilizes Trench Power AlphaMOS-II technology for low on-resistance and fast switching performance.
  • Features high current capability and optimized capacitance characteristics including low input and reverse transfer capacitance.
  • Demonstrates robust avalanche ruggedness with 100% UIS testing and dv/dt rating.

Single FETs, MOSFETs Applications

  • General lighting for LED and CCFL
  • AC/DC power supplies for industrial applications
  • AC/DC power supplies for consumer electronics
  • AC/DC power supplies for telecom equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance status and packaging type. The standard AOTF12T60P designation corresponds to the Pb Free version in a tube. Confirm thermal interface requirements match the TO-220F package specifications before integration into final assemblies.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high breakdown voltage and moderate current handling in through-hole configurations. Evaluate thermal management strategies based on the 2.5°C/W junction-to-case resistance. Ensure gate drive circuits accommodate the specified threshold voltage range and total gate charge requirements for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the AOB/AOTF12T60 family manufactured by Alpha & Omega Semiconductor. It shares electrical characteristics with the surface-mount AOB12T60P variant but utilizes a different package form factor. The product line employs advanced trench technology to achieve improved performance metrics compared to older planar devices.

Single FETs, MOSFETs Replacement Considerations

The AOB12T60P serves as the direct surface-mount equivalent within the same product family. Verify pinout compatibility and thermal dissipation capabilities when substituting between the TO-220F and TO-263 packages.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The device is rated for a single pulsed avalanche energy of 750mJ under specific test conditions.

Is the body diode reverse recovery time specified?

Yes, the body diode reverse recovery time is typically 483ns when tested at 12A forward current and 100A/us rate of rise.

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