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AOTF12T60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 12A TO220-3F. Review the specifications below when checking this part for your BOM.
The AOTF12T60P is a through-hole N-channel MOSFET utilizing Trench Power AlphaMOS-II technology. It features a drain-source voltage of 600V and a maximum junction temperature of 150°C. The device supports a continuous drain current of 12A at 25°C case temperature and a pulsed drain current of 48A. Maximum on-resistance is specified at 0.52Ω, with a typical gate charge of 33nC. Thermal resistance from junction to case is 2.5°C/W for the TO-220F package.
Verify the specific ordering suffix against official documentation to confirm compliance status and packaging type. The standard AOTF12T60P designation corresponds to the Pb Free version in a tube. Confirm thermal interface requirements match the TO-220F package specifications before integration into final assemblies.
Select this component for designs requiring high breakdown voltage and moderate current handling in through-hole configurations. Evaluate thermal management strategies based on the 2.5°C/W junction-to-case resistance. Ensure gate drive circuits accommodate the specified threshold voltage range and total gate charge requirements for optimal switching efficiency.
This part belongs to the AOB/AOTF12T60 family manufactured by Alpha & Omega Semiconductor. It shares electrical characteristics with the surface-mount AOB12T60P variant but utilizes a different package form factor. The product line employs advanced trench technology to achieve improved performance metrics compared to older planar devices.
The AOB12T60P serves as the direct surface-mount equivalent within the same product family. Verify pinout compatibility and thermal dissipation capabilities when substituting between the TO-220F and TO-263 packages.
The device is rated for a single pulsed avalanche energy of 750mJ under specific test conditions.
Yes, the body diode reverse recovery time is typically 483ns when tested at 12A forward current and 100A/us rate of rise.
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