APT1003RBLLG

Single FETs, MOSFETs Overview

The APT1003RBLLG is a surface-mount N-channel Power MOS 7® enhancement mode power MOSFET manufactured by Microchip Technology. It features a TO-247 or D3PAK package with a drain-source breakdown voltage of 1000V and a continuous drain current of 4A at 25°C case temperature. The device exhibits a maximum on-state resistance of 3.00 Ohms at VGS=10V and ID=2A, alongside a total gate charge of 34 nC. It supports an operating junction temperature range from -55°C to 150°C and offers high power dissipation capabilities.

Single FETs, MOSFETs Feature Summary

• Power MOS 7® technology significantly lowers both conduction and switching losses through reduced RDS(on) and Qg.
• Patented metal gate structure enables exceptionally fast switching speeds.
• Lower input capacitance and Miller capacitance facilitate easier driving requirements.
• Available in both TO-247 through-hole and D3PAK surface mount packages.

Single FETs, MOSFETs Applications

• High voltage power conversion circuits
• Inductive load switching applications
• Resistive switching systems
• General purpose power management designs

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-247 or D3PAK) required for your assembly process, as the base part number covers multiple physical configurations. Confirm that the ordering suffix matches the exact lead frame and marking specifications needed for your manufacturing line. Ensure electrostatic discharge handling procedures are followed during storage and installation due to device sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation up to 1000V with moderate current handling around 4A. The low gate charge makes it suitable for applications where drive efficiency is critical. Consider thermal management strategies carefully, as the linear derating factor indicates significant heat generation under load. Evaluate the safe operating area curves to ensure operation remains within specified limits during transient events.

Single FETs, MOSFETs Part Context

This device belongs to the APT1003 series of Power MOS 7® transistors, which represent a generation of low-loss, high-voltage N-channel enhancement mode MOSFETs. The series focuses on optimizing both conduction and switching performance simultaneously. Other variants in the family include different current ratings and package options, all sharing the underlying patented metal gate architecture designed for superior efficiency.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1000V rating, 4A current capacity, and 3.00 Ohm RDS(on) specification. Verify pinout compatibility between TO-247 and D3PAK packages if swapping form factors. Ensure replacement devices support the same -55°C to 150°C junction temperature range and similar gate charge characteristics for equivalent switching behavior.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy for this device?

The single pulse avalanche energy is rated at 425 mJ, starting from a junction temperature of +25°C with an inductance of 53.13mH and gate resistance of 25 Ohms.

How does the source-drain diode perform in terms of reverse recovery?

The source-drain diode has a typical reverse recovery time of 560 ns and a reverse recovery charge of 3.2 µC when tested with a source current of -4A and a di/dt of 100A/µs.

What is the peak diode recovery dv/dt capability?

The peak diode recovery dv/dt is typically 10 V/ns. Note that these numbers may reflect test circuit limitations rather than intrinsic device constraints.