APT1003RKLLG

Description：MOSFET N-CH 1000V 4A TO220
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube

SKU:a1b350424092 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT1003RKLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 4A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1003RKLLG

Description：MOSFET N-CH 1000V 4A TO220
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：694 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：139W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220 [K]
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for APT1003RKLLG

APT1003RKLLG

Single FETs, MOSFETs Overview

The APT1003RKLL is a Power MOS 7 N-channel enhancement mode power MOSFET in a TO-220 package. It features a 1000V drain-source breakdown voltage and a continuous drain current of 4A at 25°C case temperature. The maximum on-state resistance is 3.00Ω at VGS=10V and ID=2A. Total gate charge is 34nC, with input capacitance of 694pF. It supports an operating junction temperature range from -55°C to 150°C and dissipates up to 139W.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology reduces conduction and switching losses via lowered RDS(on) and Qg.
Patented metal gate structure enables exceptionally fast switching speeds.
Lower Miller capacitance and gate charge facilitate easier driving.

Single FETs, MOSFETs Applications

High voltage power conversion circuits
Inductive load switching applications
Resistive switching systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix RKLL against official Microchip documentation to confirm exact mechanical dimensions and lead finish specifications. Ensure electrostatic discharge handling procedures are followed during assembly due to device sensitivity. Confirm thermal management requirements align with the specified junction-to-case thermal impedance for your application's duty cycle.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage isolation and moderate current handling are required in a through-hole configuration. Evaluate the 3.00Ω on-resistance against system efficiency targets at the intended operating current. Consider the 139W power dissipation rating and thermal impedance characteristics for heatsink design under continuous or pulsed load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Advanced Power Technology (APT) Power MOS 7 series, now manufactured by Microchip Technology. The series focuses on high-voltage N-channel enhancement mode MOSFETs designed to minimize both static and dynamic power losses compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other APT/Microchip 1000V TO-220 MOSFETs such as the APT1003RSFLLG if surface mount packaging is preferred. Verify pinout compatibility and thermal performance metrics before substituting with devices from other manufacturers.