APT11GF120BRDQ1G

$3.76

Description：IGBT NPT 1200V 25A TO247
Series：-

SKU:e560149a119b Category: Single IGBTs Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 25A TO247
Series：-
Mfr：Microsemi Corporation
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：25 A
Current - Collector Pulsed (Icm)：24 A
Vce(on) (Max) @ Vge, Ic：3V @ 15V, 8A
Power - Max：156 W
Switching Energy：300µJ (on), 285µJ (off)
Input Type：Standard
Gate Charge：65 nC
Td (on/off) @ 25°C：7ns/100ns
Test Condition：800V, 8A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT11GF120BRDQ1G

Overview

The APT11GF120BRDQ1G is a Fast IGBT with an integrated Ultrafast Soft Recovery Anti-parallel Diode (FRED) in a TO-247 package. It utilizes Non-Punch Through technology for superior ruggedness and fast switching speed. Key electrical parameters include a Collector-Emitter Breakdown Voltage of 1200V, a Gate Threshold Voltage ranging from 4.5V to 6.5V, and a Collector-Emitter On Voltage of 3.0V typical at 8A. The device supports a continuous collector current of 25A at 25°C case temperature and handles a pulsed collector current of 24A. Total power dissipation is rated at 156W. The junction-to-case thermal resistance is 0.80°C/W for the IGBT and 1.18°C/W for the diode.

Feature Summary

Integrates a Fast IGBT with an ultrafast soft recovery anti-parallel diode for high-frequency switching applications up to 20kHz.
Features low forward voltage drop and ultra-low leakage current characteristics.
Rated for RBSOA and SCSOA to ensure operational safety under various load conditions.

Applications

High frequency power conversion circuits
Inductive switching loads requiring fast recovery
Power supplies utilizing clamped inductive switching

Procurement Notes

Verify component authenticity by checking the manufacturer's marking against the datasheet specifications. Confirm RoHS compliance status via the 'G' suffix designation. Ensure proper electrostatic discharge handling procedures are followed during storage and installation due to device sensitivity.

Selection Notes

Select this component for designs requiring a 1200V rating with integrated freewheeling diode functionality. Evaluate thermal management requirements based on the 156W total power dissipation limit and specific junction-to-case thermal resistances. Consider gate drive voltage compatibility with the specified plateau and threshold ranges.

Part Context

This part belongs to the Advanced Power Technology (APT) Fast IGBT family, now distributed under Microsemi Corporation. It represents a generation of high-voltage power devices combining NPT technology with FRED diodes. The product line focuses on providing rugged solutions for demanding power electronics environments.

Replacement Considerations

Direct substitutes within the same series may include variants with different current ratings or thermal packages. Verify pinout compatibility and electrical parameter overlaps before implementation. Cross-reference with other APT/Microsemi TO-247 IGBT modules for functional equivalence.

FAQ

What does the 'G' suffix indicate in the part number?

The 'G' suffix denotes that the component is RoHS compliant and features a lead-free terminal finish.

How is the reverse recovery time defined for the integrated diode?

The reverse recovery time (trr) is measured from the zero crossing where diode current goes from positive to negative, to the point where the straight line through IRRM and 0.25 IRRM passes through zero.