ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
APT13003DZTR-G1 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 450V 1.5A TO-92. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for APT13003DZTR-G1
- Description：TRANS NPN 450V 1.5A TO-92
- Series：-
- Mfr：Diodes Incorporated
- Package：Cut Tape (CT),Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：450 V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 250mA, 1A
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：5 @ 1A, 2V
- Power - Max：1.1 W
- Frequency - Transition：4MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for APT13003DZTR-G1
Single Bipolar Transistors Overview
The APT13003DZTR-G1 is a silicon NPN high-voltage bipolar junction transistor manufactured by Diodes Incorporated. It features a TO-92-3 through-hole package and belongs to the APT1300 series. Key electrical parameters include a collector-emitter voltage (Vceo) of 450V, a collector-emitter breakdown voltage (Vces) of 700V, and a maximum power dissipation of 1.1W. The device is designed for applications requiring high voltage handling in a compact form factor.
Single Bipolar Transistors Feature Summary
- High voltage capability with Vces up to 700V
- Compact TO-92-3 through-hole packaging
- NPN single transistor configuration
Single Bipolar Transistors Applications
- High voltage switching circuits
- General purpose amplification
- Power supply stages
Single Bipolar Transistors Procurement Notes
This component is officially listed as End-of-Life (EOL) by the manufacturer. Verification of current availability requires checking authorized distributors for remaining stock or obsolete inventory. Designers should confirm lead times and authenticity carefully when sourcing from secondary markets due to the discontinued status.
Single Bipolar Transistors Selection Notes
Select this part only if the specific 450V/700V voltage ratings and 1.1W power dissipation align with circuit requirements. Consider the TO-92-3 package constraints for thermal management. Verify that the NPN configuration matches the design topology before integration.
Single Bipolar Transistors Part Context
The APT13003DZTR-G1 is part of the APT1300 series of high-voltage NPN transistors from Diodes Incorporated. This series is characterized by its ability to operate at elevated voltages while maintaining standard small-signal package dimensions, suitable for legacy designs or specific high-voltage low-power applications.
Single Bipolar Transistors Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Due to the EOL status, alternative components must be selected based on matching electrical specifications (Vceo, Vces, Ptot) and pinout compatibility.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
