APT13005DT-G1

Single Bipolar Transistors Overview

The APT13005DT-G1 is a discontinued NPN high voltage power transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of 450V and a collector-emitter saturation voltage (BVCES) exceeding 700V. The device supports a maximum DC collector current of 4A with a peak collector current of 8A. Electrical characteristics include an emitter-base breakdown voltage of 9V, a transition frequency of 4MHz, and a static DC current gain ranging from 8 to 35 depending on the operating point. Thermal performance specifies a power dissipation of 75W at 25°C case temperature for the TO-220AB Type C package.

Single Bipolar Transistors Feature Summary

• Integrated anti-saturation circuitry designed to prevent deep saturation during switching operations.
• Built-in anti-parallel diode functionality that serves as a free-wheeling diode within the component structure.
• High voltage capability providing robust isolation and breakdown resistance for demanding power applications.

Single Bipolar Transistors Applications

• Low power AC-DC switch-mode power supplies
• Battery chargers for mobile phones, tablets, and smartphones
• Power supplies for digital video disc players and set-top boxes
• LED lighting systems

Single Bipolar Transistors Procurement Notes

This specific part number is officially marked as obsolete and discontinued by the manufacturer. Sourcing new units directly from authorized channels is not possible. Engineers must verify the exact status of any remaining stock held by third-party distributors. Procurement strategies should focus on identifying verified replacement components or alternative packages within the same product family that remain in active production.

Single Bipolar Transistors Selection Notes

Selection requires evaluating the thermal requirements of the TO-220AB Type C package, which offers higher power dissipation than isolated variants. Designers must account for the non-isolated collector tab when determining PCB creepage and clearance distances for high-voltage safety compliance. Verify that the required collector current and voltage ratings align with the system's peak operational loads and transient conditions.

Single Bipolar Transistors Part Context

The APT13005DT-G1 belongs to the APT13005D series of high voltage NPN power transistors. It utilizes a TO-220AB Type C package configuration. This series is engineered for general-purpose high voltage switching applications where integrated protection features are beneficial. The component represents a legacy solution within Diodes Incorporated's discrete semiconductor portfolio.

Single Bipolar Transistors Replacement Considerations

The datasheet lists APT13005DTF-G1 as a related variant utilizing an ITO220AB TYPE BR (TO220F) package. Both devices share identical electrical specifications but differ in physical mounting and isolation properties. Verify mechanical fit and electrical pinout compatibility before substituting this obsolete part.

Single Bipolar Transistors FAQ

What is the difference between the APT13005DT-G1 and APT13005DTF-G1?

The primary difference is the package type. The APT13005DT-G1 uses a TO-220AB Type C package with a non-isolated collector tab, while the APT13005DTF-G1 uses an ITO220AB TYPE BR (TO220F) package with an isolated collector tab.

Does the APT13005DT-G1 have internal protection features?

Yes, the device includes an integrated anti-saturation feature to improve switching speed and an integrated anti-parallel diode to act as a free-wheeling diode.

What is the maximum power dissipation for the TO-220AB Type C package?

For the TO-220AB Type C package, the maximum power dissipation is specified as 75W at a case temperature of +25°C.