APT13005DTF-G1

Single Bipolar Transistors Overview

The APT13005DTF-G1 is a discontinued NPN high voltage power transistor manufactured by Diodes Incorporated. It features an integrated anti-parallel collector-emitter diode and an anti-saturation feature. The device operates with a maximum collector current of 4A, a collector-emitter breakdown voltage (BVCEO) exceeding 450V, and a collector-emitter saturation voltage (BVCES) greater than 700V. It utilizes the ITO220AB Type BR (TO220F) package for through-hole mounting.

Single Bipolar Transistors Feature Summary

• Integrated anti-parallel collector-emitter diode functioning as a free-wheeling diode
• Anti-saturation design to enhance switching performance
• High voltage capability with BVCEO > 450V and BVCES > 700V
• Lead-free finish compliant with RoHS directives

Single Bipolar Transistors Applications

• Low power AC-DC switch-mode power supplies
• Battery chargers for mobile phones, tablets, and smartphones
• Power supplies for DVD players and set-top boxes
• LED lighting systems

Single Bipolar Transistors Procurement Notes

This component is officially marked as obsolete and discontinued by Diodes Incorporated. Verify availability through authorized distributors or secondary markets. Confirm that the specific TO220F variant matches your thermal and mechanical requirements before sourcing. Ensure compliance with end-of-life procurement policies.

Single Bipolar Transistors Selection Notes

Select this part only if legacy compatibility with the APT13005 series is required. Evaluate alternative high-voltage NPN transistors from current production lines. Consider the transition frequency and safe operating area when designing for similar low-power SMPS applications. Verify pinout alignment between the isolated TO220F and non-isolated variants.

Single Bipolar Transistors Part Context

The APT13005DTF-G1 belongs to the APT13005 family of high voltage power transistors. It is designed for medium voltage applications requiring fast switching speeds. The device employs high voltage multi-epitaxial planar technology. It is distinct from other packages in the series, such as the TO220AB Type C, due to its specific isolation characteristics.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Contact Diodes Incorporated directly for recommended obsolescence alternatives. Cross-reference with other high-voltage NPN transistors having comparable VCEO and IC ratings.