APT14050JVFR

$51.82

Description：MOSFET N-CH 1400V 23A ISOTOP
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube

SKU:fd542fbae5ce Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT14050JVFR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1400V 23A ISOTOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT14050JVFR

Description：MOSFET N-CH 1400V 23A ISOTOP
Series：POWER MOS V®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1400 V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：500mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：820 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：13500 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：694W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：ISOTOP®
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for APT14050JVFR

APT14050JVFR

Single FETs, MOSFETs Overview

The APT14050JVFR is a high-voltage N-channel enhancement mode Power MOS V® FREDFET manufactured by Microsemi. It features a 1400V drain-source breakdown voltage and a continuous drain current of 23A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.500Ω at VGS=10V and ID=11.5A. Packaged in an ISOTOP® SOT-227 format, it includes avalanche energy ratings and a fast recovery body diode.

Single FETs, MOSFETs Feature Summary

Power MOS V® technology minimizes the JFET effect to reduce on-resistance and increase packing density.
Optimized gate layout enables faster switching speeds compared to previous generations.
Features a fast recovery body diode with avalanche energy rating capabilities.
Utilizes the popular ISOTOP® SOT-227 package for base mounting.

Single FETs, MOSFETs Applications

High voltage power switching applications
Induction heating systems
Motor control circuits
Resonant converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision (e.g., Rev A) matches your design requirements. Confirm that the ISOTOP® SOT-227 package dimensions and torque specifications align with your thermal management strategy. Ensure electrostatic discharge handling procedures are followed during assembly due to device sensitivity.

Single FETs, MOSFETs Selection Notes

Select this component when a 1400V rating is required alongside moderate current handling. Consider the 0.500Ω on-resistance for conduction loss calculations. Evaluate the thermal impedance characteristics against your heat sink capabilities. Verify compatibility with your gate drive voltage levels, typically operating at 10V or 15V.

Single FETs, MOSFETs Part Context

This part belongs to the Advanced Power Technology (APT) Power MOS V® family, now under Microchip/Microsemi. It represents a generation of high-voltage N-channel MOSFETs designed to optimize performance through reduced on-resistance and improved switching dynamics within the ISOTOP® form factor.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-reference equivalents from Microchip or other manufacturers offering 1400V, ~23A, SOT-227 packaged MOSFETs. Ensure any substitute maintains similar avalanche energy ratings and reverse recovery characteristics if used in inductive loads.