APT22F120B2

$27.18

Description：MOSFET N-CH 1200V 23A T-MAX
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube

SKU:761b684d6dc3 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT22F120B2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 23A T-MAX. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT22F120B2

Description：MOSFET N-CH 1200V 23A T-MAX
Series：POWER MOS 8™
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：700mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：8370 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1040W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：T-MAX™ [B2]
Package / Case：TO-247-3 Variant

Single FETs, MOSFETs datasheet and documents for APT22F120B2

APT22F120B2

Single FETs, MOSFETs Overview

The APT22F120B2 is a Power MOS 8 series Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a PT MOS Combi technology design housed in a TO-247 MAX package. The device supports a drain-source breakdown voltage of 1200 V and a continuous collector current of 22 A. Key electrical characteristics include a maximum gate-emitter voltage of ±20 V, a typical turn-on delay time of 135 ns, and a typical fall time of 160 ns. It operates within a junction temperature range of -40°C to +175°C.

Single FETs, MOSFETs Feature Summary

Utilizes Power MOS 8 PT MOS Combi technology for optimized switching performance.
Designed for high-voltage applications with a 1200 V blocking capability.
Features a robust TO-247 MAX through-hole package for efficient thermal management.

Single FETs, MOSFETs Applications

Industrial motor drives
Switched-mode power supplies
High-frequency inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal specifications. Ensure compatibility with existing gate driver circuits regarding voltage ratings. Confirm RoHS compliance status if required by project regulations. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling. Evaluate thermal resistance requirements based on the TO-247 MAX package constraints. Consider the switching speed characteristics relative to system efficiency targets. Verify that the gate drive voltage aligns with the specified ±20 V limit.

Single FETs, MOSFETs Part Context

This IGBT belongs to the Power MOS 8 family, which integrates MOS gate control with bipolar conduction. The series is engineered for improved ruggedness and lower switching losses compared to standard IGBTs. It serves as a core switching element in power conversion systems where reliability under high stress is critical.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for equivalent devices from the same manufacturer. Verify pin compatibility and thermal footprint before replacing with competitor parts.