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Product Detailed Parameters
- Description：IGBT PT 1200V 69A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：69 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 25A
- Power - Max：417 W
- Switching Energy：500µJ (on), 438µJ (off)
- Input Type：Standard
- Gate Charge：110 nC
- Td (on/off) @ 25°C：12ns/70ns
- Test Condition：600V, 25A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT25GP120BG is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology under the POWER MOS 7 series. It utilizes Planar Topogate technology and features a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 1200 V and delivers a continuous collector current of 69 A at 25°C. Key electrical parameters include a saturation voltage of 3.3 V, a power dissipation capacity of 543 W, and an operating temperature range from -55°C to +150°C junction temperature.
Feature Summary
- Integrates Planar Topogate technology for optimized switching performance and low conduction losses.
- Features a rugged TO-247-3 leaded package designed for high-power density applications.
- Supports extended thermal operation with a maximum junction temperature rating of +150°C.
Applications
- High-frequency switch-mode power supplies
- Motor drive inverters
- Uninterruptible power systems
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official datasheet specifications. Confirm RoHS compliance status via the specific product label or certificate. Ensure the ordering suffix matches the required packaging format. Request batch traceability documentation for quality assurance purposes before finalizing procurement orders.
Selection Notes
Select this component when a 1200 V blocking capability and 69 A continuous current are required in a standard TO-247 footprint. Evaluate the 3.3 V saturation voltage against thermal management constraints to ensure adequate heat sinking. Compare switching energy losses with alternative devices if higher frequency operation is necessary for the target circuit design.
Part Context
This part belongs to the APT25GP120 family, which includes variants such as APT25GP120BDQ1G and APT35GP120BG. These components share similar electrical characteristics but may differ in packaging options or specific manufacturing revisions. The APT25GP120BG represents the standard through-hole configuration within this high-voltage discrete transistor lineup.
Replacement Considerations
Direct substitutes include other single IGBTs with 1200 V rating and comparable current handling in TO-247 packages. Verify pinout compatibility and thermal resistance values before implementing any cross-brand replacements in existing designs.
