SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APT25GT120BRG is a single NPT IGBT from Microchip Technology, rated at 1200 V collector-emitter voltage and 54 A continuous collector current. It features a TO-247 [B] through-hole package with a maximum power dissipation of 347 W. The device operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix 'BRG' against official Microchip documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides valid traceability for this semiconductor component.
Select this component for applications requiring 1200V blocking capability and moderate current handling. Confirm that the TO-247 [B] footprint matches the target PCB design and thermal management requirements.
This part belongs to the APT series of insulated gate bipolar transistors. It utilizes non-punch-through (NPT) wafer technology, offering a balance of low conduction loss and high voltage tolerance suitable for medium-power industrial electronics.
Cross-reference with other Microchip single IGBTs in the TO-247 package. Verify electrical parameters such as Vceo and Ic before substituting with generic equivalents.