APT30GT60BRDQ2G

APT30GT60BRDQ2G

$4.80
  • Description:IGBT NPT 600V 64A TO247
  • Series:Thunderbolt IGBT®

SKU:31b57404e4f6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT NPT 600V 64A TO247
  • Series:Thunderbolt IGBT®
  • Mfr:Microchip Technology
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):64 A
  • Current - Collector Pulsed (Icm):110 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 30A
  • Power - Max:250 W
  • Switching Energy:80µJ (on), 605µJ (off)
  • Input Type:Standard
  • Gate Charge:7.5 nC
  • Td (on/off) @ 25°C:12ns/225ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):22 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 [B]
  • Grade:-
  • Qualification:-

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APT30GT60BRDQ2G

Overview

The APT30GT60BRDQ2G is a discrete Insulated Gate Bipolar Transistor manufactured by Microchip Technology. It features a single IGBT configuration housed in a TO-247AD package with an integrated anti-parallel diode. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 200 W. The component operates within a junction temperature range of -55°C to +175°C and utilizes silicon technology for high-voltage switching applications.

Feature Summary

  • Integrates a fast-recovery diode monolithically with the IGBT chip to minimize reverse recovery losses.
  • Utilizes planar trench gate technology to achieve low conduction voltage drop and improved switching performance.
  • Features a robust TO-247AD insulated package designed for secure screw mounting and efficient thermal management.

Applications

  • High-frequency motor drive inverters
  • Uninterruptible power supply (UPS) systems
  • Induction heating equipment

Procurement Notes

Verify the specific suffix RDQ2 against official Microchip documentation to confirm pinout compatibility and thermal characteristics before procurement. Ensure that the ordering quantity aligns with manufacturer minimum order requirements and lead times. Cross-reference the datasheet revision history to validate parameter consistency for production integration.

Selection Notes

Select this component for designs requiring a 600 V rating with moderate current handling capabilities up to 30 A. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Evaluate thermal resistance values from the datasheet to determine appropriate heatsink sizing for the intended operating environment and duty cycle.

Part Context

This part belongs to the APT series of power semiconductors, which are engineered for general-purpose high-voltage switching. The TO-247AD package provides a standardized footprint compatible with common PCB layouts and mechanical mounting structures used in industrial power electronics.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements may differ in switching speed or thermal resistance; verify all critical parameters against the original datasheet specifications before implementation.

APT30GT60BRDQ2GAPT30GT60BRDQ2G
$4.80
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