ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 1200V 64A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：64 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 25A
- Power - Max：357 W
- Switching Energy：1.315mJ (on), 1.515mJ (off)
- Input Type：Standard
- Gate Charge：170 nC
- Td (on/off) @ 25°C：14ns/185ns
- Test Condition：800V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The APT33GF120B2RDQ2G is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a PT MOS 7 Combi technology architecture designed for high-efficiency switching applications. The device is housed in a TO-247MAX package with three leads and supports through-hole mounting. Key electrical specifications include a collector-emitter maximum voltage (VCEO) of 1200 V, a continuous collector current of 35 A at 25°C, and a gate-emitter maximum voltage rating of ±20 V. The component operates within a temperature range from -55°C to +150°C junction temperature.
Feature Summary
- Utilizes PT MOS 7 Combi technology for optimized switching performance
- Designed for robust operation in high-voltage power conversion circuits
- Provides reliable thermal management capabilities via the TO-247MAX package
Applications
- Industrial motor drives and control systems
- Uninterruptible power supply (UPS) units
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix RDQ2G against official Microchip documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing thermal interface materials and gate drive requirements before integration. Cross-reference the datasheet for absolute maximum ratings to prevent operational overstress during procurement validation.
Selection Notes
Select this component for applications requiring 1200 V blocking capability and 35 A continuous current handling. Compare saturation voltage characteristics against alternative IGBTs to ensure efficiency targets are met. Consider the TO-247MAX footprint constraints and thermal dissipation needs when designing the printed circuit board layout for optimal heat transfer.
Part Context
This part belongs to the APT series of discrete power semiconductors offered by Microchip Technology. The series focuses on providing cost-effective solutions for medium-power industrial applications. The APT33GF120B2RDQ2G represents a specific configuration within this lineup, tailored for designs needing standard through-hole mounting and proven silicon IGBT reliability.
Replacement Considerations
Consult official Microchip resources for direct cross-references. Verify pinout compatibility and thermal resistance values if substituting with other 1200 V, 35 A TO-247MAX IGBTs from different manufacturers.
