Single FETs, MOSFETs APT34F60S/TR product image

APT34F60S/TR

$13.16
  • Description:MOSFET N-CH 600V 36A D3PAK
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:1381542fe3dd Category: Brand:

  
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APT34F60S/TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 600V 36A D3PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT34F60S/TR

  • Description:MOSFET N-CH 600V 36A D3PAK
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:190mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:165 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:6640 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):624W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D3PAK
  • Package / Case:TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Single FETs, MOSFETs datasheet and documents for APT34F60S/TR

APT34F60S/TR

Single FETs, MOSFETs Overview

The APT34F60S/TR is a single N-Channel Power MOSFET manufactured by Microchip Technology, designed for surface-mount applications in the D3PAK-3 package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 36 A. The device exhibits a maximum on-resistance of 190 mOhms at room temperature. Gate-source voltage limits are specified between -30 V and +30 V, with a typical threshold voltage of 5 V. Total gate charge is 165 nC. The component supports an operating junction temperature range from -55 °C to +150 °C and offers a power dissipation rating of 624 W.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with 600 V drain-source breakdown voltage suitable for demanding power switching environments.
  • Low conduction losses achieved through a minimized on-resistance of 190 mOhms.
  • Robust thermal performance allowing operation up to a maximum junction temperature of 150 °C.

Single FETs, MOSFETs Applications

  • High-frequency power conversion circuits
  • DC-DC converter topologies
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm tape-and-reel packaging configuration. Ensure the ordering part number matches the required D3PAK-3 variant. Cross-reference electrical parameters with the latest datasheet revision to guarantee compliance with design specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-Channel MOSFET with low on-resistance is required for surface-mount designs. The 600 V rating provides sufficient headroom for industrial applications. Consider the 190 mOhm resistance for efficiency calculations and verify that the D3PAK-3 package fits the available PCB real estate constraints.

Single FETs, MOSFETs Part Context

This device belongs to the APT series of power MOSFETs from Microchip Technology. It utilizes silicon technology for reliable performance in power electronics. The D3PAK-3 package facilitates automated assembly processes while providing adequate thermal management capabilities for high-current applications.

Single FETs, MOSFETs Replacement Considerations

The APT34F60S (tube packaged) shares identical electrical characteristics but differs in packaging format. Verify pinout compatibility and thermal requirements when substituting between reel and tube variants.

APT34F60S/TRAPT34F60S/TR
$13.16
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