APT35GP120B2SC20

Description：IGBT PT MOS 7 COMBI 1200 V 35 A
Series：-

SKU:53165e84a473 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT MOS 7 COMBI 1200 V 35 A
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
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Qualification：-

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APT35GP120B2SC20

Overview

The APT35GP120B2SC20 is a single Power MOS 7™ PT IGBT manufactured by Microchip Technology. It features a TO-247 MAX (TO-247-3) through-hole package and operates within a junction temperature range of -55°C to +150°C. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 35 A at 25°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a saturation voltage of 3.3 V, and a power dissipation rating of 543 W.

Feature Summary

Integrates a zero-recovery Silicon Carbide (SiC) anti-parallel diode for improved switching performance
Utilizes Power MOS 7™ technology to optimize conduction and switching characteristics
Designed with a T-MAX™ package structure for enhanced thermal management

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
High-frequency welding equipment

Procurement Notes

Verify the specific suffix 'SC20' against official Microchip documentation to confirm the inclusion of the integrated SiC diode and exact pinout configuration. Ensure that the TO-247 MAX footprint requirements are compatible with the target PCB design before finalizing procurement orders.

Selection Notes

Select this component when high-efficiency switching and fast recovery characteristics are required in medium-power applications. The integrated SiC diode eliminates the need for external parallel diodes, simplifying circuit topology while reducing system losses compared to standard IGBT modules.

Part Context

This part belongs to the APT35GP120 series of Power MOS 7™ PT IGBTs from Microchip Technology. It represents an evolution in discrete power devices, combining advanced silicon gate technology with wide-bandgap diode integration to meet stringent efficiency standards in modern power electronics systems.