ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 1200V 100A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：170 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 45A
- Power - Max：625 W
- Switching Energy：900µJ (on), 904µJ (off)
- Input Type：Standard
- Gate Charge：185 nC
- Td (on/off) @ 25°C：18ns/102ns
- Test Condition：600V, 45A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
Download product information
Overview
The APT45GP120BG is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology under the POWER MOS 7 series. It utilizes silicon technology and features a TO-247-3 through-hole package. The device has a collector-emitter breakdown voltage of 1200 V and supports a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.3 V, a maximum gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 625 W. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- POWER MOS 7 trench gate technology for optimized switching performance
- Field-stop structure designed for high voltage blocking capability
- Single configuration suitable for discrete mounting applications
Applications
- Induction heating systems
- Switched-mode power supplies
- Motor control drives
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the TO-247-3 package dimensions match the target PCB footprint and thermal management requirements. Ensure handling procedures account for the through-hole installation method and maximum junction temperature limits during operation.
Selection Notes
Select this component when a 1200 V rated IGBT with 100 A continuous current capacity is required in a TO-247-3 package. Consider the 3.3 V saturation voltage for conduction loss calculations and the 625 W power dissipation limit for heatsink design. Verify compatibility with standard gate drive voltages within the +/- 20 V range.
Part Context
This part belongs to the APT45GP120 family of high-voltage power semiconductors from Microchip Technology. It shares the same voltage and current ratings as variants like the APT45GP120J but differs in packaging, utilizing the TO-247-3 form factor instead of the ISOTOP case. It is distinct from lower-current siblings such as the APT35GP120BG.
Replacement Considerations
Direct pin-compatible replacements in the same package may include other 1200V/100A IGBTs in TO-247-3, but electrical characteristics must be verified. Cross-referencing with similar POWER MOS 7 devices or equivalent offerings from other manufacturers requires careful comparison of Vce(sat), switching times, and thermal resistance.
