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The APT50GR120L is a single NPT (Non-Punch-Through) IGBT manufactured by Microchip Technology. It features a maximum collector-emitter breakdown voltage of 1200 V and a continuous collector current of 117 A at 25°C, with a pulsed current rating of 200 A. The device has a maximum power dissipation of 694 W and a typical saturation voltage of 3.2 V at 50 A and 15 V gate drive. Switching energies are specified as 2.14 mJ for turn-on and 1.48 mJ for turn-off under test conditions of 600 V, 50 A, and 4.3 Ω. The total gate charge is 445 nC, with delay times of 28 ns (turn-on) and 237 ns (turn-off). It operates within a junction temperature range of -55°C to 150°C and utilizes a TO-264 through-hole package.
Verify the specific ordering suffix against the official Microchip datasheet to ensure correct packaging and electrical characteristics. Confirm RoHS compliance status directly from the manufacturer's documentation before procurement. Ensure the supplier source is authorized to guarantee component authenticity and traceability.
Select this component for applications requiring high voltage blocking and moderate switching speeds. Evaluate the thermal management requirements based on the 694 W power dissipation limit. Compare the 3.2 V saturation voltage against system efficiency targets. Verify that the TO-264 package fits the intended PCB layout or heatsink mounting constraints.
This part belongs to the APT series of discrete IGBTs from Microchip Technology. It is designed for medium to high-power switching applications. The NPT construction distinguishes it from trench field-stop technologies, offering different trade-offs between switching speed and ruggedness.
Check for direct cross-references in Microchip's replacement guides. Consider parts like APT50GT120JRDQ2 for similar voltage and current ratings but different packaging. Verify pinout compatibility and thermal resistance values when substituting.