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Product Detailed Parameters
- Description：IGBT NPT 1200V 106A TO264
- Series：Thunderbolt IGBT®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：106 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 50A
- Power - Max：694 W
- Switching Energy：2585µJ (on), 1910µJ (off)
- Input Type：Standard
- Gate Charge：240 nC
- Td (on/off) @ 25°C：23ns/215ns
- Test Condition：800V, 50A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 [L]
- Grade：-
- Qualification：-
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Overview
The APT50GT120LRDQ2G is a single NPT IGBT manufactured by Microchip Technology, housed in a TO-264 package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 106 A at 25°C. The device supports a maximum power dissipation of 694 W and operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a gate-emitter voltage limit of ±20 V, a saturation voltage of 3.2 V at 50 A, and a gate charge of 445 nC. Switching times are characterized by turn-on delay of 28 ns and turn-off delay of 237 ns under standard test conditions.
Feature Summary
- NPT technology for robust high-voltage performance
- High current handling capability with low saturation voltage
- Optimized switching characteristics for medium frequency applications
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Medium frequency inverters
Procurement Notes
Verify the specific suffix RDQ2G against official Microchip documentation to confirm pinout and thermal interface compatibility. Ensure that the TO-264 mounting requirements align with the target PCB design and thermal management strategy. Cross-reference the latest datasheet revision to validate electrical limits before finalizing component selection for production.
Selection Notes
Select this component when a single IGBT with 1200 V blocking capability and high current density is required. The NPT structure offers superior short-circuit ruggedness compared to field-stop technologies. Consider the TO-264 package for through-hole mounting where screw-down or clip mounting is preferred over surface mount alternatives for higher power modules.
Part Context
This part belongs to Microchip's APT series of discrete IGBTs, designed for general-purpose power switching. The NPT (Non-Punch Through) wafer technology provides a balance between low conduction losses and high surge current capability. It serves as a core switching element in medium-power conversion circuits requiring reliable operation at elevated temperatures.
Replacement Considerations
Direct substitutes may include other Microchip NPT IGBTs in the TO-264 package with similar voltage and current ratings, such as the APT50GR120L, provided pinout and thermal characteristics match the application requirements.
