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The APT60GT60JR is a single IGBT module manufactured by Microchip Technology, housed in an SOT-227 package. It features a 600V collector-emitter voltage rating and a continuous collector current of 100A. The device utilizes NPT technology and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a maximum Vce(sat) of 2.5V at 60A with a 15V gate drive, a peak collector current of 360A, and a typical switching energy of 3.4mJ. The module has a power dissipation rating of 500W and a gate charge of 275nC.
Verify the specific suffix 'JR' against official Microchip documentation to confirm exact revision status, as suffixes can indicate packaging or material changes. Confirm availability status directly with authorized distributors, as this component may be subject to end-of-life notices or limited stock conditions. Ensure compliance with RoHS directives relevant to your region before procurement.
Select this component for applications requiring a 600V, 100A single IGBT in a screw-mountable SOT-227 form factor. Consider the 2.5V saturation voltage and 3.4mJ switching energy for thermal management calculations. Verify that the gate drive requirements align with the specified 15V operating condition and 275nC gate charge for optimal switching performance.
This part belongs to the Thunderbolt IGBT series from Microchip Technology. It is designed for general-purpose power switching applications. The SOT-227 package provides a compact solution for medium-power circuits, offering a balance between current handling capability and physical footprint compared to larger industrial modules.
Check for direct pin-compatible replacements within the same voltage and current ratings. Verify that any substitute maintains the NPT technology characteristics and similar switching energy profiles to ensure circuit compatibility without redesign.