APT75GP120B2G

$21.69

Description：IGBT PT 1200V 100A
Series：POWER MOS 7®

SKU:808fe347a87c Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 1200V 100A
Series：POWER MOS 7®
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：100 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 75A
Power - Max：1042 W
Switching Energy：1620µJ (on), 2500µJ (off)
Input Type：Standard
Gate Charge：320 nC
Td (on/off) @ 25°C：20ns/163ns
Test Condition：600V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3 Variant
Supplier Device Package：-
Grade：-
Qualification：-

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APT75GP120B2G

Overview

The APT75GP120B2G is a single-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology under the POWER MOS 7® series. It utilizes Planar Trench Field-Stop technology and is housed in an ISOTOP® package designed for screw mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. Key electrical parameters include a maximum power dissipation of 329 W, a gate-emitter voltage range of -20 V to +20 V, and a junction temperature operating range from -55°C to +150°C.

Feature Summary

POWER MOS 7® Planar Trench Field-Stop technology
ISOTOP® screw-mount packaging

Applications

Motor drives
Switched-mode power supplies
Inverters

Procurement Notes

Verify the specific suffix against official documentation to confirm exact configuration details. Confirm RoHS compliance status through the manufacturer's datasheet or environmental declaration. Ensure the ordering part number matches the required package type and terminal configuration before procurement.

Selection Notes

Select this component based on its 1200 V blocking capability and 75 A current rating. Evaluate thermal management requirements given the 329 W power dissipation limit. Verify that the ISOTOP® package dimensions fit the target PCB layout and heatsinking constraints.

Part Context

This IGBT belongs to the POWER MOS 7® family, which incorporates Planar Trench Field-Stop technology. This architecture is engineered to provide optimized switching performance and low conduction losses compared to previous generations.