SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APT75GP120JDQ3 is a single IGBT module manufactured by Microchip Technology, utilizing Silicon technology. It features the ISOTOP package design in an SOT-227-4 configuration with screw mount installation. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.3 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 329 W. The component operates within a temperature range from -55°C to +150°C.
Verify the specific suffix JDQ3 against official Microchip documentation to confirm exact specifications, as datasheets may vary by revision. Confirm RoHS compliance status through the manufacturer's official product page or certified distributor channels before procurement.
Select this component for applications requiring high voltage handling up to 1.2 kV and moderate current capacity. Ensure the cooling solution accommodates the 329 W power dissipation rating. Verify that the operating environment stays within the specified -55°C to +150°C temperature range for reliable performance.
This part belongs to the APT series of IGBT modules from Microchip Technology, designed for general purpose power switching applications. It shares the SOT-227-4 form factor with other variants in the lineup, offering a standardized footprint for board layout compatibility across similar power levels.
Direct substitutes include APT75GP120J and APT75GT120JU2. Verify pinout compatibility and thermal resistance values when replacing. Ensure the alternative part meets the same voltage and current ratings for equivalent circuit performance.