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The APT80GP60B2G is a single IGBT module manufactured by Microchip Technology, utilizing Silicon PT MOS 7 technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.2 V and a gate-emitter leakage current of 100 nA. Maximum power dissipation is rated at 1.041 kW. It operates within a temperature range of -55°C to +150°C and uses a T-Max-3 package with through-hole mounting.
Verify the specific ordering suffix B2G against official Microchip documentation to confirm pinout and electrical characteristics match design requirements. Confirm RoHS compliance status via the manufacturer's datasheet before integration. Ensure procurement channels provide genuine components with traceable manufacturing records to maintain system reliability.
Select this component when a 600 V single IGBT with 100 A continuous current capacity is required. The T-Max-3 package suits through-hole PCB layouts. Evaluate thermal resistance parameters from the datasheet to ensure adequate heatsinking for the 1.041 kW dissipation rating under expected operating conditions.
This part belongs to the Microchip APT series of IGBT modules. It shares the 600 V voltage class with other variants like APT80GP60J but differs in packaging and current ratings. The B2G suffix typically denotes specific packaging or environmental compliance attributes within the product line.
Direct substitutes include APT80GP60J, though it utilizes an ISOTOP-4 package instead of T-Max-3. Verify mechanical footprint compatibility and thermal interface requirements when considering alternative packages within the same electrical specification family.