APT8M80K

Single FETs, MOSFETs Overview

The APT8M80K is an N-channel Power MOSFET from Microsemi Corporation, designed for high-speed switch-mode power applications. It features a proprietary planar stripe design ensuring reliability and manufacturability. The device operates with a drain-source breakdown voltage of 800V and a continuous drain current of 8A at 25°C case temperature. Its maximum on-resistance is 1.35Ω at VGS=10V and ID=4A. Key electrical characteristics include a gate charge of 23nC and a reverse transfer capacitance (Crss) of 6pF. The component is housed in a TO-220 package.

Single FETs, MOSFETs Feature Summary

• Fast switching performance with low electromagnetic interference and radio frequency interference.
• Ultra-low reverse transfer capacitance for improved noise immunity.
• High avalanche energy capability enhancing reliability in boost and flyback circuits.
• Poly-silicon gate structure controls slew rates for reliable paralleling.

Single FETs, MOSFETs Applications

• Power Factor Correction (PFC) and other boost converters
• Buck converters
• Two-switch forward topologies
• Single-switch forward converters
• Flyback converters
• Inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm package type and compliance status. Confirm RoHS compliance requirements against the latest datasheet revision. Ensure thermal management solutions match the junction-to-case thermal resistance specifications. Validate that the operating voltage and current ratings align with the circuit's absolute maximum ratings.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring fast switching speeds and low EMI. Consider the 800V breakdown voltage and 8A continuous current rating for appropriate load matching. Evaluate the thermal impedance curves for heat sink sizing. Verify compatibility with gate drive voltages given the threshold voltage range.

Single FETs, MOSFETs Part Context

This part belongs to the Power MOS 8 family, characterized by high-speed operation and high voltage capabilities. It utilizes a planar stripe design to achieve low switching losses through reduced input and Miller capacitances. The technology supports reliable paralleling even at very high frequencies due to intrinsic gate resistance control.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the same Power MOS 8 series or comparable 800V N-channel MOSFETs with similar RDS(on) and Qg values. Ensure pinout compatibility for TO-220 packages. Verify that replacement devices meet the same avalanche energy ratings if used in inductive switching applications.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 25A.

How does the poly-silicon gate structure benefit the device?

It helps control slew rates during switching, resulting in low EMI and enabling reliable paralleling even at very high frequencies.