APTGF150H120G

$130.05

Description：IGBT MODULE 1200V 200A 961W SP6
Series：-

SKU:af9e39ffc689 Category: IGBT Modules Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1200V 200A 961W SP6
Series：-
Mfr：Microchip Technology
Package：Bulk
IGBT Type：NPT
Configuration：Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 150A
Input：Standard
NTC Thermistor：No
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：SP6
Supplier Device Package：SP6
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：200 A
Power - Max：961 W
Current - Collector Cutoff (Max)：350 µA
Input Capacitance (Cies) @ Vce：10.2 nF @ 25 V

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APTGF150H120G

Overview

The APTGF150H120G is a full-bridge NPT IGBT power module manufactured by Microchip Technology. It features four IGBTs and four anti-parallel diodes in an isolated SP6 package. The device supports a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 150 A at Tc = 80°C, with a pulsed current rating of 300 A. Maximum power dissipation reaches 961 W at Tc = 25°C. The junction-to-case thermal resistance is 0.13 °C/W for the IGBT and 0.24 °C/W for the diode. Operating junction temperature ranges from -40°C to 150°C.

Feature Summary

Non-Punch Through (NPT) FAST IGBT technology providing low voltage drop and low tail current
Soft recovery parallel diodes designed for low forward voltage and low leakage current
Kelvin emitter configuration integrated for simplified gate drive circuitry
Symmetrical design utilizing M5 power connectors to minimize stray inductance

Applications

Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control systems

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm datasheet revision status prior to integration. Ensure electrostatic discharge handling procedures are strictly followed during assembly. Validate that application requirements align with absolute maximum ratings and thermal constraints specified in the official documentation.

Selection Notes

Select this module for applications requiring high-frequency operation up to 50 kHz. Evaluate thermal management capabilities against the specified junction-to-case thermal resistance values. Consider the positive temperature coefficient of VCEsat when designing parallel configurations. Verify compatibility with the required isolation voltage and mounting torque specifications for the SP6 package.

Part Context

This component belongs to the Microchip Technology IGBT power module family. It utilizes Non-Punch Through technology optimized for robust performance in industrial power conversion environments. The full-bridge topology integrates both switching elements and freewheeling diodes within a single isolated package.

Replacement Considerations

Consult official Microchip Technology documentation for verified substitute part numbers. Cross-reference electrical parameters and physical dimensions before implementation.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.