APTGF300DA120G

Overview

The APTGF300DA120G is a single NPT IGBT power module with an integrated diode, housed in an isolated SP6 package. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 400 A at Tc=25°C. The saturation voltage (VCE(sat)) is 3.9 V max at 300 A and 15 V gate drive. Maximum power dissipation reaches 1780 W at Tc=25°C. The junction-to-case thermal resistance is 0.07 °C/W for the IGBT and 0.16 °C/W for the diode. Isolation voltage is 4000 Vrms.

Feature Summary

• Non-Punch-Through (NPT) FAST IGBT technology providing low voltage drop and low tail current.
• Soft recovery parallel diodes designed to minimize reverse recovery losses.
• Kelvin emitter configuration included to facilitate easy and stable gate drive connections.
• Symmetrical design with M5 power connectors ensures very low stray inductance.

Applications

• AC and DC motor control systems
• Switched Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• Boost chopper topologies

Procurement Notes

Verify component authenticity through authorized Microsemi distributors or official channels. Confirm RoHS compliance status and check for specific revision markings on the package. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent damage to the sensitive semiconductor components.

Selection Notes

Select this module for high-frequency applications up to 50 kHz due to its fast switching characteristics. Consider the positive temperature coefficient of VCEsat for stable paralleling capabilities. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance values and operating case temperature limits.

Part Context

This component belongs to the Microsemi NPT IGBT Power Module family. It utilizes Non-Punch-Through technology to achieve robust performance under high voltage conditions. The SP6 package provides a standardized mounting interface for industrial power electronics designs requiring high current density and reliable thermal dissipation.

Replacement Considerations

Direct substitutes require matching 1200V/400A ratings and SP6 packaging. Verify electrical parameters such as VCE(sat), switching times, and thermal resistance against the original datasheet specifications to ensure circuit compatibility and performance retention.

FAQ

What is the maximum switching frequency supported by this module?

The module supports switching frequencies up to 50 kHz, enabled by its low tail current and soft recovery diode characteristics.

How does the Kelvin emitter benefit the circuit design?

The Kelvin emitter allows for separate connection of the gate drive return path, reducing noise coupling and ensuring stable switching performance by isolating the drive loop from high-current load paths.

What is the isolation voltage rating between terminals and the case?

The RMS isolation voltage is rated at 4000 Vrms for any terminal to the case, tested for 1 minute at 50/60 Hz.