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The APTGF50DA120TG is a single NPT IGBT module manufactured by Microsemi Corporation. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at 25°C. The device has a saturation voltage of 1.7 V and a maximum power dissipation of 277 W. It operates within a temperature range of -40°C to +100°C and utilizes an SP4 screw-mount package.
Verify the specific suffix (TG) against official Microchip or Microsemi documentation to confirm exact electrical characteristics and packaging details. Confirm component availability status, as this part may be discontinued or subject to long lead times depending on current production cycles. Ensure compatibility with required thermal management solutions for the specified power dissipation ratings.
Select this module when a 1200 V single IGBT with 75 A continuous current capability is required. Consider the 1.7 V saturation voltage for conduction loss calculations. Verify that the SP4 package fits the mechanical constraints of the target assembly. Evaluate thermal resistance requirements against the 277 W power dissipation limit for the intended operating environment.
This component belongs to the APTGF series of NPT IGBT modules from Microsemi. These modules are designed for demanding power electronics applications requiring high reliability and efficient switching. The series typically includes various current ratings and voltage configurations to suit different industrial and commercial power conversion needs.
Public confirmed substitute part numbers are not available in the provided source data. Consult official Microchip Technology replacement guides or cross-reference lists for compatible alternatives.