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Product Detailed Parameters
- Description：IGBT MODULE 1200V 75A 312W SP6P
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：NPT
- Configuration：Three Phase
- Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6-P
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：312 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.45 nF @ 25 V
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Overview
The APTGF50TA120PG is a Non Punch Through (NPT) FAST IGBT power module manufactured by Microsemi. It features a triple phase leg configuration with an isolated SP6-P package, enabling direct heatsink mounting and low stray inductance via symmetrical lead frames. The device supports switching frequencies up to 50 kHz and includes soft recovery parallel diodes. Key electrical ratings include a collector-emitter breakdown voltage of 1200 V, a continuous collector current of 75 A at 25°C case temperature, and a maximum power dissipation of 312 W. The junction-to-case thermal resistance is 0.4 °C/W for the IGBT and 0.9 °C/W for the diode.
Feature Summary
- Kelvin emitter connection facilitates easy gate drive circuitry.
- Soft recovery parallel diodes reduce reverse recovery losses.
- Positive temperature coefficient of VCE(sat) enables easy paralleling for higher current capability.
- Solderable terminals provided for both power and signal connections.
Applications
- Welding converters
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
- Motor control
Procurement Notes
Verify component authenticity through authorized Microsemi distributors or official channels. Confirm RoHS compliance status and check for specific ordering suffixes that may alter pinout or performance characteristics. Ensure storage conditions remain within the specified range prior to assembly.
Selection Notes
Select this module for applications requiring high-frequency operation up to 50 kHz and robust short-circuit withstand capability. Evaluate thermal management requirements based on the 0.4 °C/W junction-to-case resistance. Consider the 12mm profile for space-constrained designs requiring direct heatsink mounting.
Part Context
This component belongs to the Microsemi NPT IGBT power module family. It utilizes advanced silicon technology to achieve low conduction and switching losses. The triple phase leg design integrates multiple switches into a single compact unit, simplifying inverter topology implementation.
Replacement Considerations
Consult Microsemi documentation for qualified alternative part numbers within the same product family. Verify compatibility regarding pinout, thermal resistance, and electrical ratings before substitution.
FAQ
What is the maximum operating frequency for this module?
The module supports switching frequencies up to 50 kHz.
How does the module facilitate paralleling for increased current?
It features a positive temperature coefficient for VCE(sat), allowing legs to be easily paralleled to achieve three times the current capability.
What is the isolation voltage rating?
The RMS isolation voltage from any terminal to the case is rated at 4000 V for one minute at 50/60 Hz.
