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The APTGT100TDU60PG is a silicon IGBT module manufactured by Microchip Technology, utilizing trench field-stop technology. It features a triple dual common source configuration within an SP6-P screw-mount package. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 150 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V, a gate-emitter leakage current of 400 nA, and a maximum power dissipation of 340 W. The unit operates within a temperature range of -40°C to +100°C, with a maximum gate-emitter voltage of 20 V.
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the SP6-P package dimensions and mounting hole patterns match the intended heatsink design. Ensure thermal interface materials are compatible with the module's base plate requirements for optimal heat dissipation during operation.
Select this component when a high-current three-phase solution is required with a 600 V rating. The 150 A continuous current capability suits moderate to high-power industrial loads. Verify that the system's switching frequency and thermal management infrastructure can accommodate the specified 340 W power dissipation and 1.5 V saturation voltage characteristics under expected operating conditions.
This part belongs to the APTGT series of high-voltage power discretes and modules from Microchip Technology. It shares the SP6-P form factor with other variants like the APTGT75TDU60PG but offers higher current handling. The series utilizes trench field-stop technology to balance low conduction losses with manageable switching performance for industrial power electronics.
Direct replacements must maintain the triple dual common source configuration and SP6-P package. Compare the APTGT75TDU60PG for lower current needs or the APTGT300DU60G for different current/voltage ratios. Verify pinout compatibility and thermal resistance values before substituting.