APTGT150A60TG

APTGT150A60TG

$47.05
  • Description:IGBT MODULE 600V 225A 480W SP4
  • Series:-

SKU:6234f6e3087e Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 225A 480W SP4
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 150A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP4
  • Supplier Device Package:SP4
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):225 A
  • Power - Max:480 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:9.2 nF @ 25 V

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APTGT150A60TG

Overview

The APTGT150A60TG is a dual IGBT module manufactured by Microchip Technology, utilizing Trench + Field Stop technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 225 A at 25°C. The saturation voltage (VCE(sat)) is specified at 1.5 V, with a power dissipation rating of 480 W. The device operates within a junction temperature range of -40°C to +100°C and uses the SP1-12 screw-mount package.

Feature Summary

  • Incorporates Trench + Field Stop IGBT technology for low voltage drop and reduced tail current.
  • Features soft recovery parallel diodes with low forward voltage and leakage current.
  • Includes an internal thermistor for precise temperature monitoring.
  • Utilizes Kelvin emitter connections to facilitate easy gate drive implementation.

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control systems

Procurement Notes

Verify the specific suffix against official documentation, as variations may indicate differences in packaging or manufacturing origin. Confirm RoHS compliance status directly from the manufacturer's datasheet before integration. Ensure thermal interface materials are compatible with the SP1-12 package specifications for optimal heat transfer performance.

Selection Notes

Select this component for applications requiring high efficiency and robust switching capabilities up to 20 kHz. The dual configuration suits half-bridge topologies. Evaluate the 480 W power dissipation limit against the system's thermal management strategy. Verify that the 600 V rating aligns with the DC bus voltage requirements of the target circuit design.

Part Context

This module belongs to the APTGT series of high-power IGBT modules designed for industrial and automotive applications. The series emphasizes high integration and reliability through advanced trench field stop technology. It serves as a core switching element in power conversion systems where efficiency and thermal stability are critical operational parameters.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Microchip replacement guides or equivalent technical specifications from other manufacturers.

APTGT150A60TGAPTGT150A60TG
$47.05
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