APTGT30DDA60T3G

APTGT30DDA60T3G

$26.41
  • Description:IGBT MODULE 600V 50A 90W SP3
  • Series:-

SKU:dbbb402446d1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 50A 90W SP3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Dual Boost Chopper
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 30A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):50 A
  • Power - Max:90 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:1.6 nF @ 25 V

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APTGT30DDA60T3G

Overview

The APTGT30DDA60T3G is a dual boost chopper power module manufactured by Microsemi Corporation, utilizing Trench + Field Stop IGBT technology. It features two integrated IGBTs and anti-parallel diodes within an isolated SP3 package. The device supports a collector-emitter breakdown voltage of 600 V and a continuous collector current of 30 A at a case temperature of 80°C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical saturation voltage of 1.5 V at 25°C, and a maximum power dissipation of 90 W. The module incorporates an internal NTC thermistor with a resistance of 50 kΩ at 25°C for thermal monitoring.

Feature Summary

  • Integrates Trench + Field Stop IGBT technology to achieve low voltage drop and reduced tail current.
  • Features soft recovery parallel diodes with low forward voltage and low leakage current.
  • Includes Kelvin emitter connections to facilitate easy drive circuit implementation.
  • Designed with very low stray inductance through a symmetrical layout.

Applications

  • AC and DC motor control systems
  • Switched Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits

Procurement Notes

Verify the specific revision status and manufacturing origin when sourcing this component. Confirm that the SP3 package mounting torque requirements are met during installation to ensure reliable thermal contact. Check for any applicable RoHS compliance documentation relevant to the production batch. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly.

Selection Notes

Select this module for applications requiring a dual boost configuration with high switching frequency capabilities up to 20 kHz. Consider the thermal resistance characteristics and the need for heatsink mounting via M4 screws. Evaluate the junction temperature range limits against the expected operating environment. Verify that the gate drive voltage requirements align with the specified ±15 V or ±20 V limits.

Part Context

This component belongs to the Microsemi APTGT series of trench field stop IGBT power modules. It is designed as a compact solution for medium-power conversion tasks. The SP3 package provides an isolated platform suitable for direct mounting to heatsinks. The integration of an internal thermistor allows for precise thermal management without external sensors.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires matching the SP3 package dimensions, 600V rating, and dual boost topology. Consult official Microsemi catalogs for potential family replacements.

APTGT30DDA60T3GAPTGT30DDA60T3G
$26.41
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