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Product Detailed Parameters
- Description：IGBT MODULE 1200V 75A 277W SP4
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：277 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.6 nF @ 25 V
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Overview
The APTGT50H120TG is a single IGBT module manufactured by Microchip Technology, formerly Microsemi. It utilizes trench field-stop technology and features a 1200 V collector-emitter voltage rating with a continuous collector current of 80 A at 25°C. The device has a maximum power dissipation of 176 W and operates within a junction temperature range of -40°C to 175°C. Packaged in the SP3 format for chassis mounting, it includes an integrated NTC thermistor for thermal monitoring.
Feature Summary
- Trench field-stop technology for optimized switching performance
- Integrated NTC thermistor for precise thermal management
- High junction temperature capability up to 175°C
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter systems
Procurement Notes
Verify the manufacturer designation carefully, as the component was originally produced by Microsemi Corporation before its acquisition by Microchip Technology. Confirm that the specific suffix corresponds to the SP3 package and standard pinout configuration required for your chassis mount application.
Selection Notes
Select this module when a single high-voltage switch with moderate current capacity is required. Ensure the cooling solution supports the 176 W dissipation limit. Verify compatibility with the SP3 footprint and confirm that the control circuitry aligns with the standard gate input requirements.
Part Context
This component belongs to the APTGT series of insulated gate bipolar transistor modules. The series is characterized by the use of trench field-stop technology, which provides improved switching characteristics compared to older non-punch-through designs. The 'H' variant typically denotes specific internal configurations within the 1200 V family.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the SP3 package dimensions, 1200 V / 80 A ratings, and electrical parameters against alternative offerings from other manufacturers.
