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The APTGX300A120T6G is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP6C screw-mount package. It features a half-bridge configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 415 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a power dissipation rating of 1.02 kW. Gate-emitter leakage current is specified at 200 nA, with a maximum gate-emitter voltage range of -20 V to +20 V. Operating temperatures span from -40°C to +125°C.
Verify the specific revision level against the latest manufacturer datasheet before integration. Confirm that the SP6C package dimensions align with the target heatsink interface. Ensure gate drive circuits accommodate the specified voltage limits. Validate thermal management designs against the 1.02 kW dissipation rating under expected operating conditions.
Select this component when a 1.2 kV half-bridge IGBT module is required for high-current applications up to 415 A. The SP6C package suits screw-mounted installations where moderate thermal performance is sufficient. Consider alternative packages if press-fit mounting or higher current density is necessary for the specific system design constraints.
This module belongs to the APTGX series of insulated gate bipolar transistors designed for medium to high-power conversion systems. The series utilizes trench field-stop technology to balance switching speed and conduction losses. The SP6C form factor provides a standardized footprint for easy integration into existing industrial power electronics architectures.
Direct replacements require matching the 1.2 kV voltage rating, 415 A current capacity, and SP6C package type. Verify pin compatibility and thermal characteristics before substituting with other manufacturers' half-bridge modules.