APTGX300A120T6G

APTGX300A120T6G

$134.49
  • Description:PM-IGBT-TFS-SP6C
  • Series:-

SKU:27f746fe0843 Category: Brand:

  
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Product Detailed Parameters

  • Description:PM-IGBT-TFS-SP6C
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 300A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):415 A
  • Power - Max:1.02 kW
  • Current - Collector Cutoff (Max):24 µA
  • Input Capacitance (Cies) @ Vce:60000 pF @ 25 V

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APTGX300A120T6G

Overview

The APTGX300A120T6G is a silicon-based IGBT module manufactured by Microchip Technology, housed in an SP6C screw-mount package. It features a half-bridge configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 415 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.8 V and a power dissipation rating of 1.02 kW. Gate-emitter leakage current is specified at 200 nA, with a maximum gate-emitter voltage range of -20 V to +20 V. Operating temperatures span from -40°C to +125°C.

Feature Summary

  • Half-bridge topology for efficient power switching applications
  • SP6C screw-mount packaging for robust mechanical stability
  • Silicon technology optimized for high-current industrial environments

Applications

  • Industrial motor drives
  • Uninterruptible power supplies
  • High-frequency inverters

Procurement Notes

Verify the specific revision level against the latest manufacturer datasheet before integration. Confirm that the SP6C package dimensions align with the target heatsink interface. Ensure gate drive circuits accommodate the specified voltage limits. Validate thermal management designs against the 1.02 kW dissipation rating under expected operating conditions.

Selection Notes

Select this component when a 1.2 kV half-bridge IGBT module is required for high-current applications up to 415 A. The SP6C package suits screw-mounted installations where moderate thermal performance is sufficient. Consider alternative packages if press-fit mounting or higher current density is necessary for the specific system design constraints.

Part Context

This module belongs to the APTGX series of insulated gate bipolar transistors designed for medium to high-power conversion systems. The series utilizes trench field-stop technology to balance switching speed and conduction losses. The SP6C form factor provides a standardized footprint for easy integration into existing industrial power electronics architectures.

Replacement Considerations

Direct replacements require matching the 1.2 kV voltage rating, 415 A current capacity, and SP6C package type. Verify pin compatibility and thermal characteristics before substituting with other manufacturers' half-bridge modules.

APTGX300A120T6GAPTGX300A120T6G
$134.49
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